©2004 Fairchild Semiconductor Corporation

ISL9V2040D3S / ISL9V2040S3S / ISL9V2040P3 Rev. B3, October 2004

Package Marking and Ordering Information

Off State Characteristics

On State Characteristics

Dynamic Characteristics

Switching Characteristics

Thermal Characteristics

Device Marking

Device

Package

Reel Size

Tape Width

Quantity

V2040D

ISL9V2040D3ST

TO-252AA

330mm

16mm

2500

V2040S

ISL9V2040S3ST

TO-263AB

330mm

24mm

800

V2040P

ISL9V2040P3

TO-220AB

Tube

N/A

50

V2040D

ISL9V2040D3S

TO-252AA

Tube

N/A

75

V2040S

ISL9V2040S3S

TO-263AB

Tube

N/A

50

Symbol

Parameter

Test Conditions

Min

Typ

Max

Units

Collector to Emitter Breakdown Voltage

370

400

430

V

Collector to Emitter Breakdown Voltage

390

420

450

V

Emitter to Collector Breakdown Voltage

30

-

-

V

Gate to Emitter Breakdown Voltage

±12

±14

-

V

Collector to Emitter Leakage Current

See Fig. 11

-

25

µA

-

1

mA

Emitter to Collector Leakage Current

Fig. 11

-

1

mA

-

40

mA

Series Gate Resistance

-

70

-

Ω

Gate to Emitter Resistance

10K

-

26K

Ω

Collector to Emitter Saturation Voltage

See Fig. 3

-1.45

1.9

V

Collector to Emitter Saturation Voltage

See Fig. 4

-1.95

2.3

V

Gate Charge

-12

-

nC

Gate to Emitter Threshold Voltage

See Fig. 10

-

2.2

V

-

1.8

V

Gate to Emitter Plateau Voltage

-

3.4

-

V

Current Turn-On Delay Time-Resistive

-0.61

-

µs

Current Rise Time-Resistive

-

2.17

-

µs

Current Turn-Off Delay Time-Inductive

-3.64

-

µs

Current Fall Time-Inductive

-

2.36

-

µs

SCIS

Self Clamped Inductive Switching

Fig. 1 & 2

-

-

200

mJ

Thermal Resistance Junction-Case

TO-252, TO-263, TO-220

-

-

1.15

°C/W