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ISL9V5036S3S Datasheet(PDF) 4 Page - Fairchild Semiconductor

Part # ISL9V5036S3S
Description  EcoSPARKTM 500mJ, 360V, N-Channel Ignition IGBT
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Manufacturer  FAIRCHILD [Fairchild Semiconductor]
Direct Link  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

ISL9V5036S3S Datasheet(HTML) 4 Page - Fairchild Semiconductor

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©2004 Fairchild Semiconductor Corporation
ISL9V5036S3S / ISL9V5036P3 / ISL9V5036S3 Rev. C3, October 2004
Figure 7. Collector to Emitter On-State Voltage vs
Collector Current
Figure 8. Transfer Characteristics
Figure 9. DC Collector Current vs Case
Temperature
Figure 10. Threshold Voltage vs Junction
Temperature
Figure 11. Leakage Current vs Junction
Temperature
Figure 12. Switching Time vs Junction
Temperature
Typical Characteristics (Continued)
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
0
50
40
02.0
1.0
3.0
4.0
30
TJ = 175°C
VGE = 4.0V
VGE = 3.7V
VGE = 4.5V
VGE = 5.0V
VGE = 8.0V
20
10
VGE, GATE TO EMITTER VOLTAGE (V)
2.0
1.0
3.0
4.0
50
40
30
0
2.5
1.5
3.5
4.5
PULSE DURATION = 250µs
DUTY CYCLE < 0.5%, VCE = 5V
TJ = 25°C
TJ = 175°C
TJ = -40°C
20
10
TC, CASE TEMPERATURE (°C)
50
25
175
125
75
50
100
150
40
30
20
10
0
VGE = 4.0V
175
50
100
2.0
1.8
1.6
1.4
1.0
TJ, JUNCTION TEMPERATURE (°C)
150
0
125
1.2
VCE = VGE
ICE = 1mA
-50
75
25
-25
TJ, JUNCTION TEMPERATURE (°C)
1000
10
0.1
10000
100
1
25
-25
175
125
75
-50
0
50
100
150
VECS = 24V
VCES = 300V
VCES = 250V
25
175
125
75
50
100
150
TJ, JUNCTION TEMPERATURE (°C)
20
16
12
6
2
ICE = 6.5A, VGE = 5V, RG = 1KΩ
Resistive tOFF
Inductive tOFF
Resistive tON
10
14
18
8
4


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