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KSC5030F Datasheet(PDF) 2 Page - Fairchild Semiconductor |
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KSC5030F Datasheet(HTML) 2 Page - Fairchild Semiconductor |
2 / 6 page 2 www.fairchildsemi.com KSC5030F Rev. A Electrical Characteristics T C = 25°C unless otherwise noted hFE Classification Symbol Parameter Conditions Min. Typ. Max Units BVCBO Collector-Base Breakdown Voltage IC = 1mA, IE = 0 1100 V BVCEO Collector-Emitter Breakdown Voltage IC = 5mA, IB = 0 800 V BVEBO Emitter-Base Breakdown Voltage IE = 1mA, IC = 0 7 V VCEX(sus) Collector-Emitter Sustaining Voltage IC = 3A, IB1 = - IB2 = 0.6A L=1mH, Clamped 800 V ICBO Collector Cut-off Current VCB = 800V, IE = 0 10 µA IEBO Emitter Cut-off Current VEB = 5V, IC = 0 10 µA hFE1 hFE2 DC Current Gain VCE = 5V, IC = 0.6A VCE = 5V, IC = 2.0A 10 8 40 VCE(sat) Collector-Emitter Saturation Voltage IC = 3A, IB = 0.6A 2.0 V VBE(sat) Base-Emitter Saturation Voltage IC = 3A, IB = 0.6A 1.5 V COB Output Capacitance VCB = 10V, IE = 0, f = 1MHz 120 pF tON Turn On Time VCC=400V, IC=4A IB1=0.8A, IB2=-1.6A RL=100Ω 0.5 µs tSTG Storage Time 3.0 µs tF Fall Time 0.3 µs Classification R O Y hFE1 10 ~ 20 15 ~ 30 20 ~ 40 |
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