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PBYR7020WT Datasheet(PDF) 2 Page - NXP Semiconductors |
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PBYR7020WT Datasheet(HTML) 2 Page - NXP Semiconductors |
2 / 5 page Philips Semiconductors Product specification Rectifier diodes PBYR7025WT series Schottky barrier ELECTRICAL CHARACTERISTICS T j = 25 ˚C unless otherwise stated SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V F Forward voltage (per diode) I F = 35 A; Tj = 125˚C - 0.40 0.46 V I F = 70 A; Tj = 125˚C - 0.52 0.54 V I F = 70 A - 0.58 0.64 V I R Reverse current (per diode) V R = VRRM - 0.8 15 mA V R = VRRM; Tj = 100 ˚C - 40 120 mA C d Junction capacitance (per f = 1MHz; V R = 5V; Tj = 25 ˚C to - 2100 - pF diode) 125 ˚C December 1998 2 Rev 1.000 |
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