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PBYR735X Datasheet(PDF) 1 Page - NXP Semiconductors |
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PBYR735X Datasheet(HTML) 1 Page - NXP Semiconductors |
1 / 5 page Philips Semiconductors Product specification Rectifier diodes PBYR745X series schottky barrier GENERAL DESCRIPTION QUICK REFERENCE DATA Low leakage, platinum barrier, SYMBOL PARAMETER MAX. MAX. MAX. UNIT schottky rectifier diodes in a full pack plastic envelope featuring low PBYR7- 35X 40X 45X forward voltage drop, absence of V RRM Repetitive peak reverse 35 40 45 V stored charge. and guaranteed voltage reverse surge capability. The devices V F Forward voltage 0.57 0.57 0.57 V are intended for use in switched mode I F(AV) Average forward current 7.5 7.5 7.5 A power supplies and high frequency circuits in general where low conduction and zero switching losses are important. PINNING - SOD113 PIN CONFIGURATION SYMBOL PIN DESCRIPTION 1 cathode 2 anode case isolated LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT -35 -40 -45 V RRM Repetitive peak reverse voltage - 35 40 45 V V RWM Crest working reverse voltage - 35 40 45 V V R Continuous reverse voltage T hs ≤ 128 ˚C - 35 40 45 V I F(AV) Average forward current square wave; δ = 0.5; - 7.5 A T hs ≤ 123 ˚C I F(RMS) RMS output current - 10.6 A I FRM Repetitive peak forward current t = 25 µs; δ = 0.5; - 15 A T hs ≤ 123 ˚C I FSM Non-repetitive peak forward t = 10 ms - 100 A current t = 8.3 ms - 110 A sinusoidal T j = 125 ˚C prior to surge; with reapplied V RRM(max) I 2tI2t for fusing t = 10 ms - 50 A 2s I RRM Repetitive peak reverse current t p = 2 µs; δ = 0.001 - 1 A I RSM Non-repetitive peak reverse t p = 100 µs- 1 A current T stg Storage temperature -65 175 ˚C T j Operating junction temperature - 150 ˚C 12 case k a 12 August 1996 1 Rev 1.000 |
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