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MOC211-M Datasheet(PDF) 3 Page - Fairchild Semiconductor |
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MOC211-M Datasheet(HTML) 3 Page - Fairchild Semiconductor |
3 / 10 page 6/15/05 Page 3 of 10 © 2005 Fairchild Semiconductor Corporation SMALL OUTLINE OPTOCOUPLERS TRANSISTOR OUTPUT MOC211-M MOC212-M MOC213-M ** Typical values at TA = 25°C 1. Isolation Surge Voltage, VISO, is an internal device dielectric breakdown rating. 2. For this test, Pins 1 and 2 are common and Pins 5, 6 and 7 are common. 3. VISO rating of 2500 VAC(rms) for t = 1 min. is equivalent to a rating of 3,000 VAC(rms) for t = 1 sec. 4. Current Transfer Ratio (CTR) = IC/IF x 100%. ELECTRICAL CHARACTERISTICS (TA = 25°C Unless otherwise specified) Parameter Test Conditions Symbol Min Typ** Max Unit EMITTER Input Forward Voltage (IF = 10 mA) VF — 1.15 1.5 V Reverse Leakage Current (VR = 6.0 V) IR — 0.001 100 µA Input Capacitance CIN —18— pF DETECTOR Collector-Emitter Dark Current (VCE = 10 V, TA = 25°C) (VCE = 10 V, TA = 100°C) ICEO1 ICEO2 — — 1.0 1.0 50 — nA µA Collector-Emitter Breakdown Voltage (IC = 100 µA) BVCEO 30 100 — V Emitter-Collector Breakdown Voltage (IE = 100 µA) BVECO 7.0 10 — V Collector-Emitter Capacitance (f = 1.0 MHz, VCE = 0) CCE — 7.0 — pF COUPLED Collector-Output Current(4) MOC211-M MOC212-M MOC213-M (IF = 10 mA, VCE = 10 V) CTR 20 50 100 — — — — — — % Isolation Surge Voltage(1,2,3) f = (60 Hz AC Peak, t = 1 min.) VISO 2500 — — Vac(rms) Isolation Resistance(2) (V = 500 V) RISO 1011 —— Ω Collector-Emitter Saturation Voltage (IC = 2.0 mA, IF = 10 mA) VCE (sat) —— 0.4 V Isolation Capacitance(2) (V = 0 V, f = 1 MHz) CISO — 0.2 — pF Turn-On Time (IC = 2.0 mA, VCC = 10 V, RL = 100 Ω) (Fig. 6) ton — 7.5 — µs Turn-Off Time (IC = 2.0 mA, VCC = 10 V, RL = 100 Ω) (Fig. 6) toff — 5.7 — µs Rise Time (IC = 2.0 mA, VCC = 10 V, RL = 100 Ω) (Fig. 6) tr — 3.2 — µs Fall Time (IC = 2.0 mA, VCC = 10 V, RL = 100 Ω) (Fig. 6) tf — 4.7 — µs |
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