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MOC217-M Datasheet(PDF) 3 Page - Fairchild Semiconductor |
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MOC217-M Datasheet(HTML) 3 Page - Fairchild Semiconductor |
3 / 9 page 6/15/05 Page 3 of 9 © 2005 Fairchild Semiconductor Corporation SMALL OUTLINE SURFACE MOUNT PHOTOTRANSISTOR OPTOCOUPLERS MOC215-M MOC216-M MOC217-M ** Typical values at TA = 25°C unless otherwise noted. 1. Input-Output Isolation Surge Voltage, VISO, is an internal device dielectric breakdown rating. 2. For this test, Pins 1 and 2 are common and Pins 5, 6 and 7 are common. 3. VISO rating of 2,500 VAC(RMS) for t = 1 minute is equivalent to a rating of 3,000 VAC(RMS) for t = 1 second. 4. Current Transfer Ratio (CTR) = IC/IF x 100%. ELECTRICAL CHARACTERISTICS (TA = 25°C Unless otherwise specified) Characteristic Symbol Min Typ** Max Unit EMITTER Forward Voltage (IF = 1.0 mA) VF — 1.07 1.3 V Reverse Leakage Current (VR = 6.0 V) IR — 0.001 100 µA Capacitance C —18— pF DETECTOR Collector-Emitter Dark Current (VCE = 5.0 V, TA = 25°C) ICEO — 1.0 50 nA (VCE = 5.0 V, TA = 100°C) — 1.0 — µA Collector-Emitter Breakdown Voltage (IC = 100 µA) BVCEO 30 100 — V Emitter-Collector Breakdown Voltage (IE = 100 µA) BVECO 7.0 10 — V Collector-Emitter Capacitance (f = 1.0 MHz, VCE = 0) CCE — 7.0 — pF COUPLED Output Collector Current(4) MOC215-M MOC216-M MOC217-M (IF = 1.0 mA, VCE = 5.0 V) CTR 20 50 100 — — — — — — % Collector-Emitter Saturation Voltage (IC = 100µA, IF = 1.0mA) VCE(sat) —— 0.4 V Turn-On Time (IC = 2.0 mA, VCC = 10 V, RL = 100 Ω, fig. 10) ton — 4.0 — µs Turn-Off Time (IC = 2.0 mA, VCC = 10 V, RL = 100 Ω, fig. 10) toff — 4.0 — µs Rise Time (IC = 2.0 mA, VCC = 10 V, RL = 100 Ω, fig. 10) tr — 3.0 — µs Fall Time (IC = 2.0 mA, VCC = 10 V, RL = 100 Ω, fig. 10) tf — 3.0 — µs Input-Output Isolation Voltage(1,2,3) (f = 60 Hz, t = 1.0 min.) VISO 2500 — — Vac(rms) Isolation Resistance(2) (VI-O = 500 V) RISO 1011 —— Ω Isolation Capacitance(2) (VI-O = 0, f = 1.0 MHz) CISO — 0.2 — pF |
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