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PCA8581CT Datasheet(PDF) 10 Page - NXP Semiconductors |
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PCA8581CT Datasheet(HTML) 10 Page - NXP Semiconductors |
10 / 20 page 1997 Apr 02 10 Philips Semiconductors Product specification 128 × 8-bit EEPROM with I2C-bus interface PCA8581; PCA8581C 10 DC CHARACTERISTICS VDD = 2.5 to 6.0 V (PCA8581C); VDD = 4.5 to 5.5 V (PCA8581); VSS = 0 V; Tamb = −25 to +85 °C; note 1; unless otherwise specified. Note 1. The PCA8581C is guaranteed to be programmed with all locations ‘FF’ (hexadecimal) provided the device has been stored within the temperature limits −65 to +85 °C. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Supply VDD supply voltage PCA8581C 2.5 − 6.0 V PCA8581 4.5 − 5.5 V IDD supply current standby mode fSCL = 0 Hz; VIL = 0 V; VIH = VDD −− 10 µA during read cycle fSCL = 100 Hz; VIL = 0 V; VIH = VDD −− 400 µA during write cycle VIL = 0 V; VIH = VDD −− 1000 µA Inputs A0, A1, A2, SDA and SCL VIL LOW level input voltage −− 0.3VDD V VIH HIGH level input voltage 0.7VDD −− V ILI input leakage current VI =VDD or VSS −− 1 µA Ci input capacitance VI =VSS −− 7pF Output SDA IOL LOW level output current VOL = 0.4 V 3 −− mA Erase/write data tWR write time − 710 ms tRET data retention time 10 −− years |
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