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IRLR8503PBF Datasheet(PDF) 1 Page - International Rectifier |
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IRLR8503PBF Datasheet(HTML) 1 Page - International Rectifier |
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1 / 8 page  www.irf.com 1 IRLR8503PbF Parameter Symbol IRLR8503 Units Drain-Source Voltage V DS 30 V Gate-Source Voltage V GS ±20 Continuous Drain or Source T C = 25°C I D 44 A T C = 90°C 32 Pulsed Drain Current I DM 196 Power Dissipation T C = 25°C P D 62 W T C = 90°C 30 Junction & Storage Temperature Range T J, TSTG –55 to 150 °C Continuous Source Current (Body Diode) I S 15 A Pulsed source Current I SM 196 • N-Channel Application-Specific MOSFET • Ideal for CPU Core DC-DC Converters • Low Conduction Losses • Minimizes Parallel MOSFETs for high current applications • Lead-Free Description This new device employs advanced HEXFET Power MOSFET technology to achieve very low on-resistance. The reduced conduction losses makes it ideal for high efficiency DC-DC converters that power the latest generation of microprocessors. The IRLR8503 has been optimized and is 100% tested for all parameters that are critical in synchronous buck converters including R DS(on), gate charge and Cdv/dt- induced turn-on immunity. The IRLR8503 offers an extremely low combination of Q sw & RDS(on) for reduced losses in control FET applications. The package is designed for vapor phase, infra-red, convection, or wave soldering techniques. Power dissipation of greater than 2W is possible in a typical PCB mount application. HEXFET® MOSFET for DC-DC Converters IRLR8503PbF V DS 30V R DS(on) 18 m Ω Q G 20 nC Q sw 8 nC Q oss 29.5 nC DEVICE RATINGS (MAX. Values) IRLR8503PbF D-Pak Absolute Maximum Ratings Parameter Symbol Max. Units Maximum Junction-to-Ambient R θJA 50 °C/W Maximum Junction-to-Lead R θJL 2.0 °C/W Thermal Resistance Current (V GS ≥ 10V)
S D G PD- 95095A 12/06/04 |
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