|
| MT5C1008LL |
|
||
|
AUSTIN |
|
4 page
SRAM SRAM SRAM SRAM SRAM MT5C1008(LL) Ultra Low Power Austin Semiconductor, Inc. MT5C1008(LL) Rev. 1.0 7/02 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 4 AC TEST LOADS AND WAVEFORMS CAPACITANCE1 PARAMETER CONDITIONS SYM MAX UNITS Input Capacitance (A0 - A16) CIN 8pF Input Capacitance (CE\, WE\, OE\) CCLK 10 pF Output Capacitance COUT 12 pF TA = 25°C, f = 1MHz, Vcc = 5.0V DATA RETENTION CHARACTERISTICS (-55oC < T C < 125 oC; V CC = 5.0V +10%) PARAMETER CONDITIONS SYM MIN MAX UNITS Vcc for Data Retention VDR 2.0 V Data Retention Current ICCDR 150 µA Chip Deselect to Data Retention Time tCDR 0ns Operation Recovery Time tR 200 µs 0.2V, Vcc = VDR = 2.0V, CE1\ > Vcc - 0.3V or CE2 < 0.3V, VIN > Vcc - 0.3V or VIN < 0.3V NOTES: 1. Tested initially and after any design or process changes that may effect these parameters. DATA RETENTION WAVEFORM |
|
Link URL |
Sponsor of Alldatasheet |
|
| Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Bookmark | Link Exchange | Manufacturer List All Rights Reserved© Alldatasheet.com 2003 - 2012 |
| Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com | Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl |