PN200

PN200A

MMBT200

MMBT200A

PNP General Purpose Amplifier

This device is designed for general purpose amplifier applications

at collector currents to 300 mA. Sourced from Process 68.

Absolute Maximum Ratings*

TA = 25°C unless otherwise noted

NOTES:

1) These ratings are based on a maximum junction temperature of 150 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

3) All voltages (V) and currents (A) are negative polarity for PNP transistors.

Thermal Characteristics

TA = 25°C unless otherwise noted

Symbol

Parameter

Value

Units

Collector-Emitter Voltage

45

V

Collector-Base Voltage

60

V

Emitter-Base Voltage

6.0

V

Collector Current - Continuous

500

mA

Operating and Storage Junction Temperature Range

-55 to +150

°C

Symbol

Characteristic

Max

Units

PN200

PN200A

*MMBT200

*MMBT200A

Total Device Dissipation

Derate above 25

°C

625

5.0

350

2.8

mW

mW/

°C

Thermal Resistance, Junction to Case

83.3

°C/W

Thermal Resistance, Junction to Ambient

200

357

°C/W

SOT-23

Mark: N2 / N2A

C

B

E

TO-92

C

B

E

 1997 Fairchild Semiconductor Corporation