8/4/04

Page 3 of 7

© 2004 Fairchild Semiconductor Corporation

PLASTIC SILICON

QSE156 QSE157 QSE158 QSE159

NOTES:

1. Derate power dissipation linearly 2.50 mW/°C above 25°C.

2. RMA flux is recommended.

3. Methanol or isopropyl alcohols are recommended as cleaning agents.

4. Soldering iron 1/16" (1.6 mm) minimum from housing.

5.

λ = 880 nm (AlGaAs).

Parameter

Symbol

Rating

Unit

Operating Temperature

-40 to +85

°C

Storage Temperature

-40 to +100

°C

240 for 5 sec

°C

260 for 10 sec

°C

Output Current

50

mA

Supply Voltage

4.0 to 16

V

Output Voltage

30

V

100

mW

Parameter

Symbol

Min

Typ

Max

Units

Test Conditions

Ee (+)

0.025

0.250

Hysteresis Ratio

Ee (+)/Ee(–)

1.10

2.00

Supply Current

—

5.0

mA

Peak to peak ripple which will cause false

triggering

—

2.00

V

f = DC to 50 MHZ

QSE156 (BUFFER TOTEM POLE)

High Level Output Voltage

—

V

(5)

Low Level Output Voltage

—

0.40

V

QSE157 (INVERTER TOTEM POLE)

High Level Output Voltage

—

V

Low Level Output Voltage

—

0.40

V

(5)

QSE158 (BUFFER OPEN COLLECTOR)

High Level Output Current

—

100

µA

(5)

Low Level Output Voltage

—

0.40

V

QSE159 (INVERTER OPEN COLLECTOR)

High Level Output Current

—

100

µA

Low Level Output Voltage

—

0.40

V

(5)

QSE156, QSE157

Output rise, fall times

tr, tf

—

70

nS

(5)

Propagation delay

tphl, tplh

6.0

µS

QSE158, QSE159

Output rise, fall times

tr, tf

—

100

nS

(5)

Propagation delay

tphl, tplh

6.0

µS