DYNAMIC CHARACTERISTICS

APT50M50L2LL

Note:

Duty Factor D =

t1/t

2

Peak TJ = PDM x ZθJC + TC

t1

t2

SINGLE PULSE

1.0

RECTANGULARPULSEDURATION(SECONDS)

FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION

0.16

0.14

0.12

0.10

0.08

0.06

0.04

0.02

0

0.5

0.1

0.3

0.7

0.9

0.05

Characteristic / Test Conditions

Continuous Source Current (Body Diode)

GS

= 0V, I

S

Reverse Recovery Time (I

S

S

/dt = 100A/µs)

Reverse Recovery Charge (I

S

S

/dt = 100A/µs)

UNIT

Amps

Volts

ns

µC

V/ns

MIN

TYP

MAX

89

356

1.3

680

17.0

8

Symbol

MIN

TYP

MAX

0.14

40

UNIT

°C/W

Characteristic

Junction to Case

Junction to Ambient

Symbol

I

S

I

SM

V

SD

t

rr

Q

rr

dt

Symbol

C

iss

C

oss

C

rss

Q

g

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

E

on

E

off

E

on

E

off

Characteristic

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Gate-Source Charge

Gate-Drain ("Miller ") Charge

Turn-on Delay Time

Rise Time

Turn-off Delay Time

Fall Time

Turn-off Switching Energy

Turn-off Switching Energy

Test Conditions

V

GS

= 0V

V

DS

= 25V

f = 1 MHz

V

GS

= 10V

V

DD

= 250V

I

D

= 89A @ 25°C

RESISTIVE SWITCHING

V

GS

= 15V

V

DD

= 250V

I

D

= 89A @ 25°C

R

G

= 0.6

Ω

INDUCTIVE SWITCHING @ 25°C

V

DD

= 333V, V

GS

= 15V

I

D

= 89A, R

G

= 3

Ω

INDUCTIVE SWITCHING @ 125°C

V

DD

= 333V, V

GS

= 15V

I

D

= 89A, R

G

= 3

Ω

MIN

TYP

MAX

10550

2060

105

200

50

105

24

22

56

8

1490

1650

2105

1835

UNIT

pF

nC

ns

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS

THERMAL CHARACTERISTICS

1 Repetitive Rating: Pulse width limited by maximum junction

temperature

2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%

3 See MIL-STD-750 Method 3471

500V

T

150

6 Eon includes diode reverse recovery. See figures 18, 20.

APT Reserves the right to change, without notice, the specifications and information contained herein.