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APT50M50L2LL Datasheet(PDF) 2 Page - Microsemi Corporation |
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APT50M50L2LL Datasheet(HTML) 2 Page - Microsemi Corporation |
2 / 5 page DYNAMIC CHARACTERISTICS APT50M50L2LL Note: Duty Factor D = t1/t 2 Peak TJ = PDM x ZθJC + TC t1 t2 SINGLE PULSE 10-5 10-4 10-3 10-2 10-1 1.0 RECTANGULARPULSEDURATION(SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION 0.16 0.14 0.12 0.10 0.08 0.06 0.04 0.02 0 0.5 0.1 0.3 0.7 0.9 0.05 Characteristic / Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current 1 (Body Diode) Diode Forward Voltage 2 (V GS = 0V, I S = -89A) Reverse Recovery Time (I S = -89A, dl S /dt = 100A/µs) Reverse Recovery Charge (I S = -89A, dl S /dt = 100A/µs) Peak Diode Recovery dv/dt 5 UNIT Amps Volts ns µC V/ns MIN TYP MAX 89 356 1.3 680 17.0 8 Symbol RθJC RθJA MIN TYP MAX 0.14 40 UNIT °C/W Characteristic Junction to Case Junction to Ambient Symbol I S I SM V SD t rr Q rr dv/ dt Symbol C iss C oss C rss Q g Q gs Q gd t d(on) t r t d(off) t f E on E off E on E off Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge 3 Gate-Source Charge Gate-Drain ("Miller ") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy 6 Turn-off Switching Energy Turn-on Switching Energy 6 Turn-off Switching Energy Test Conditions V GS = 0V V DS = 25V f = 1 MHz V GS = 10V V DD = 250V I D = 89A @ 25°C RESISTIVE SWITCHING V GS = 15V V DD = 250V I D = 89A @ 25°C R G = 0.6 Ω INDUCTIVE SWITCHING @ 25°C V DD = 333V, V GS = 15V I D = 89A, R G = 3 Ω INDUCTIVE SWITCHING @ 125°C V DD = 333V, V GS = 15V I D = 89A, R G = 3 Ω MIN TYP MAX 10550 2060 105 200 50 105 24 22 56 8 1490 1650 2105 1835 UNIT pF nC ns µJ SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS THERMAL CHARACTERISTICS 1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471 4 Starting Tj = +25°C, L = 0.81mH, RG = 25Ω, Peak IL = 89A 5 dv /dt numbers reflect the limitations of the test circuit rather than the device itself. I S ≤ -89A di/dt ≤ 700A/µs V R ≤ 500V T J ≤ 150 °C 6 Eon includes diode reverse recovery. See figures 18, 20. APT Reserves the right to change, without notice, the specifications and information contained herein. |
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