APT50M60L2VFR datasheet(3/5 Pages) MICROSEMI

Part #	APT50M60L2VFR

Description	POWER MOS V짰 FREDFET

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Manufacturer	MICROSEMI [Microsemi Corporation]

Direct Link	http://www.microsemi.com

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Typical Performance Curves

APT50M60L2VFR

6.5V

7.5V

5.5V

7V

TJ = +125°C

TJ = +25°C

TJ = -55°C

VDS> ID (ON) x RDS (ON)MAX.

250 µSEC. PULSE TEST

@ <0.5 % DUTY CYCLE

V

DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL

FIGURE3,LOW VOLTAGE OUTPUTCHARACTERISTICS

V

GS, GATE-TO-SOURCE VOLTAGE (VOLTS)

I

D, DRAIN CURRENT (AMPERES)

FIGURE4, TRANSFERCHARACTERISTICS

FIGURE 5, R

DS(ON) vs DRAIN CURRENT

T

C, CASE TEMPERATURE (°C)

T

J, JUNCTION TEMPERATURE (°C)

FIGURE6,MAXIMUMDRAINCURRENTvsCASETEMPERATURE

FIGURE7,BREAKDOWNVOLTAGEvsTEMPERATURE

T

J, JUNCTION TEMPERATURE (°C)

T

C, CASE TEMPERATURE (°C)

FIGURE8,ON-RESISTANCEvs.TEMPERATURE

FIGURE9,THRESHOLDVOLTAGEvsTEMPERATURE

6V

0

5

10

15

20

25

30

0

123456

0

20

40

60

80

100 120 140 160

25

50

75

100

125

150

-50 -25

0

25

50

75

100 125 150

-50

-25

0

25

50

75

100 125 150

-50

-25

0

25

50

75 100 125 150

140

120

100

80

60

40

20

0

80

70

60

50

40

30

20

10

0

2.5

2.0

1.5

1.0

0.5

0.0

I

D = 38.5A

V

GS = 10V

200

180

160

140

120

100

80

60

40

20

0

1.40

1.30

1.20

1.10

1.00

0.90

0.80

1.15

1.10

1.05

1.00

0.95

0.90

0.85

1.2

1.1

1.0

0.9

0.8

0.7

0.6

8V

VGS=10V

VGS=20V

NORMALIZED TO

V

GS = 10V @ 38.5A

0.0545

0.0957

0.0487F

0.922F

Power

(watts)

RC MODEL

Junction

temp. (

°C)

Case temperature. (

°C)

VGS =15 & 10V

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