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ZXMN6A11G Datasheet(PDF) 1 Page - Zetex Semiconductors |
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ZXMN6A11G Datasheet(HTML) 1 Page - Zetex Semiconductors |
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1 / 8 page  Issue 4 - September 2006 1 www.zetex.com © Zetex Semiconductors plc 2006 ZXMN6A11G 60V SOT223 N-channel enhancement mode MOSFET Summary Description This new generation trench MOSFET from Zetex features a unique structure combining the benefits of low on-resistance and fast switching, making it ideal for high efficiency power management applications. Features • Low on-resistance • Fast switching speed • Low threshold • Low gate drive • SOT223 package Applications • DC-DC converters • Power management functions • Disconnect switches • Motor control Ordering information Device marking ZXMN 6A11 V(BR)DSS RDS(on) ( ) ID (A) 60 0.120 @ VGS= 10V 4.4 0.180 @ VGS= 4.5V 3.5 Device Reel size (inches) Tape width (mm) Quantity per reel ZXMN6A11GTA 7 12 1,000 D S G D Pinout - top view S D G |
Similar Part No. - ZXMN6A11G_06 |
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Similar Description - ZXMN6A11G_06 |
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