4

ZXM61P02F

PARAMETER

SYMBOL MIN.

TYP.

MAX.

UNIT CONDITIONS.

STATIC

Drain-Source Breakdown Voltage

-20

V

Zero Gate Voltage Drain Current

-1

µA

Gate-Body Leakage

±100

nA

Gate-Source Threshold Voltage

-0.7

V

Static Drain-Source On-State Resistance

(1)

0.6

0.9

Ω

Ω

Forward Transconductance (3)

0.56

S

DYNAMIC (3)

Input Capacitance

150

pF

f=1MHz

Output Capacitance

70

pF

Reverse Transfer Capacitance

30

pF

SWITCHING(2) (3)

Turn-On Delay Time

2.9

ns

(Refer to test circuit)

Rise Time

6.7

ns

Turn-Off Delay Time

11.2

ns

Fall Time

10.1

ns

Total Gate Charge

3.5

nC

(Refer to test circuit)

Gate-Source Charge

0.5

nC

Gate Drain Charge

1.5

nC

SOURCE-DRAIN DIODE

Diode Forward Voltage (1)

-0.95

V

Reverse Recovery Time (3)

14.9

ns

di/dt= 100A/

µs

Reverse Recovery Charge(3)

5.6

nC

(1) Measured under pulsed conditions. Width=300

µs. Duty cycle ≤2% .

(2) Switching characteristics are independent of operating junction temperature.

(3) For design aid only, not subject to production testing.

ISSUE

1 - JUNE 2004