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ZXM61P03F Datasheet(PDF) 2 Page - Zetex Semiconductors |
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ZXM61P03F Datasheet(HTML) 2 Page - Zetex Semiconductors |
2 / 7 page ZXM61P03F SEMICO NDUC TORS ISSUE 1 - OCTOBER 2005 2 THERMAL RESISTANCE PARAMETER SYMBOL VALUE UNIT Junction to Ambient (a) RθJA 200 °C/W Junction to Ambient (b) RθJA 155 °C/W NOTES: (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions (b) For a device surface mounted on FR4 PCB measured at t 5 secs. (c) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal Impedance graph. ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDSS -30 V Gate- Source Voltage VGS 20 V Continuous Drain Current (VGS=-10V; TA=25°C)(b) (VGS=-10V; TA=70°C)(b) ID -1.1 -0.9 A Pulsed Drain Current (c) IDM -4.3 A Continuous Source Current (Body Diode)(b) IS -0.88 A Pulsed Source Current (Body Diode)(c) ISM -4.3 A Power Dissipation at TA=25°C (a) Linear Derating Factor PD 625 5 mW mW/°C Power Dissipation at TA=25°C (b) Linear Derating Factor PD 806 6.4 mW mW/°C Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C |
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