ISSUE 1 - JUNE 2004

ZXM62N03E6

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

V

DSS

30

V

Gate Source Voltage

V

GS

20

V

Continuous Drain Current (V

(V

I

D

3.2

2.6

A

Pulsed Drain Current (c)

I

DM

18

A

Continuous Source Current (Body Diode) (b)

I

S

2.1

A

Pulsed Source Current (Body Diode)

I

SM

18

A

Power Dissipation at T

Linear Derating Factor

P

D

1.1

8.8

W

mW/°C

Power Dissipation at T

Linear Derating Factor

P

D

1.7

13.6

W

mW/°C

Operating and Storage Temperature Range

T

-55 to +150

°C

THERMAL RESISTANCE

PARAMETER

SYMBOL

VALUE

UNIT

Junction to Ambient (a)

113

°C/W

Junction to Ambient (b)

73

°C/W

NOTES:

(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions

(b) For a device surface mounted on FR4 PCB measured at t 5 secs.

(c) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal Impedance graph.

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