PARAMETER

SYMBOL MIN.

TYP.

MAX.

UNIT CONDITIONS.

STATIC

Drain-Source Breakdown Voltage

20

V

Zero Gate Voltage Drain Current

1

µA

Gate-Body Leakage

100

nA

Gate-Source Threshold Voltage

0.7

V

Static Drain-Source On-State Resistance

(1)

0.040

0.050

Ω

Ω

Forward Transconductance (3)

6.1

S

DYNAMIC (3)

Input Capacitance

1100

pF

f=1MHz

Output Capacitance

350

pF

Reverse Transfer Capacitance

100

pF

SWITCHING(2) (3)

Turn-On Delay Time

5.7

ns

(Refer to test

circuit)

Rise Time

9.6

ns

Turn-Off Delay Time

28.3

ns

Fall Time

11.6

ns

Total Gate Charge

16

nC

(Refer to test

circuit)

Gate-Source Charge

3.5

nC

Gate Drain Charge

5.4

nC

SOURCE-DRAIN DIODE

Diode Forward Voltage (1)

0.95

V

Reverse Recovery Time (3)

23.7

ns

di/dt= 100A/

µs

Reverse Recovery Charge(3)

13.3

nC

(1) Measured under pulsed conditions. Width=300

µs. Duty cycle ≤2% .

(2) Switching characteristics are independent of operating junction temperature.

(3) For design aid only, not subject to production testing.

4

ZXM64N02X

ISSUE 1 - JUNE 2004