BUV22 datasheet(2/4 Pages) ONSEMI

Part #	BUV22

Description	SWITCHMODE Series NPN Silicon Power Transistor

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Manufacturer	ONSEMI [ON Semiconductor]

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BUV22

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ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS (Note 1)

Collector−Emitter Sustaining Voltage

(IC = 200 mA, IB = 0, L = 25 mH)

VCEO(sus)

250

Vdc

Collector Cutoff Current at Reverse Bias

(VCE = 300 V, VBE = −1.5 V)

(VCE = 300 V, VBE = −1.5 V, TC = 125_C)

ICEX

3.0

12.0

mAdc

Collector−Emitter Cutoff Current

(VCE = 200 V)

ICEO

3.0

mAdc

Emitter−Base Reverse Voltage

(IE = 50 mA)

VEBO

7

V

Emitter−Cutoff Current

(VEB = 5 V)

IEBO

1.0

mAdc

SECOND BREAKDOWN

Second Breakdown Collector Current with base forward biased

(VCE = 20 V, t = 1 s)

(VCE = 140 V, t = 1 s)

IS/b

12

0.15

Adc

ON CHARACTERISTICS (Note 1)

DC Current Gain

(IC = 10 A, VCE = 4 V)

(IC = 20 A, VCE = 4 V)

hFE

20

10

60

Collector−Emitter Saturation Voltage

(IC = 10 A, IB = 1 A)

(IC = 20 A, IB = 2.5 A)

VCE(sat)

1.0

1.5

Vdc

Base−Emitter Saturation Voltage

(IC = 40 A, IB = 4 A)

VBE(sat)

1.5

Vdc

DYNAMIC CHARACTERISTICS

Current Gain — Bandwidth Product

(VCE = 15 V, IC = 2 A, f = 4 MHz)

fT

8.0

MHz

SWITCHING CHARACTERISTICS (Resistive Load)

Turn−on Time

(IC = 20 A, IB1 = IB2 = 2.5 A,

VCC = 100 V, RC = 5 W)

ton

0.8

ms

Storage Time

ts

2.0

Fall Time

tf

0.35

1. Pulse Test: Pulse Width

v 300 ms, Duty Cycle v 2%.

Figure 1. Power Derating

1.0

0

TC, TEMPERATURE (°C)

40

80

160

200

0.4

0.8

0.6

0.2

120

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