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ZHCS2000TA Datasheet(PDF) 4 Page - Zetex Semiconductors |
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ZHCS2000TA Datasheet(HTML) 4 Page - Zetex Semiconductors |
4 / 8 page ISSUE 2 - DECEMBER 2002 ZHCS2000 4 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. Reverse Breakdown Voltage V(BR)R 40 V IR=1mA Forward Voltage VF 290 340 380 420 485 420 325 385 445 500 615 mV mV mV mV mV mV IF=500mA* IF=1000mA* IF=1500mA* IF=2000mA* IF=3000mA* IF=2000mA*,Tamb=100°C* Reverse Current IR 160 300 µA VR=30V Diode Capacitance CD 50 pF f=1MHz,VR=25V Reverse Recovery Time trr 5.5 ns switched from IF = 500mA to IR = 500mA Measured at IR = 50mA *Measured under pulsed conditions. Pulse width=300 µs. Duty cycle ≤2% |
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