MPS751G datasheet(2/6 Pages) ONSEMI

Part #	MPS751G

Description	Amplifier Transistors

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Manufacturer	ONSEMI [ON Semiconductor]

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MPS650, MPS651, NPN MPS750, MPS751, PNP

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ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector −Emitter Breakdown Voltage (Note 1)

(IC = 10 mAdc, IB = 0)

MPS650, MPS750

MPS651, MPS751

V(BR)CEO

40

60

−

Vdc

Collector −Base Breakdown Voltage

(IC = 100 mAdc, IE = 0 )

MPS650, MPS750

MPS651, MPS751

V(BR)CBO

60

80

−

Vdc

Emitter −Base Breakdown Voltage

(IC = 0, IE = 10 mAdc)

V(BR)EBO

5.0

−

Vdc

Collector Cutoff Current

(VCB = 60 Vdc, IE = 0)

MPS650, MPS750

(VCB = 80 Vdc, IE = 0)

MPS651, MPS751

ICBO

−

0.1

mAdc

Emitter Cutoff Current

(VEB = 4.0 V, IC = 0)

IEBO

−

0.1

mAdc

ON CHARACTERISTICS (Note 1)

DC Current Gain

(IC = 50 mA, VCE = 2.0 V)

(IC = 500 mA, VCE = 2.0 V)

(IC = 1.0 A, VCE = 2.0 V)

(IC = 2.0 A, VCE = 2.0 V)

hFE

75

40

−

Collector −Emitter Saturation Voltage

(IC = 2.0 A, IB = 200 mA)

(IC = 1.0 A, IB = 100 mA)

VCE(sat)

−

0.5

0.3

Vdc

Base−Emitter On Voltage (IC = 1.0 A, VCE = 2.0 V)

VBE(on)

−

1.0

Vdc

Base −Emitter Saturation Voltage (IC = 1.0 A, IB = 100 mA)

VBE(sat)

−

1.2

Vdc

SMALL−SIGNAL CHARACTERISTICS

Current−Gain − Bandwidth Product (Note 2)

(IC = 50 mAdc, VCE = 5.0 Vdc, f = 100 MHz)

fT

75

−

MHz

1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle = 2.0%.

2. fT is defined as the frequency at which |hfe| extrapolates to unity.

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