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DIM375WHS06-S000 Datasheet(PDF) 5 Page - Dynex Semiconductor |
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DIM375WHS06-S000 Datasheet(HTML) 5 Page - Dynex Semiconductor |
5 / 8 page DIM375WHS06-S000 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 5/8 www.dynexsemi.com TYPICAL CHARACTERISTICS Fig.3 Typical output characteristics Fig.4 Typical output characteristics 0 Collector-emitter voltage, Vce - (V) 100 200 300 400 700 600 500 0 1.0 2.0 3.0 4.0 5.0 6.0 Common emitter Tcase = 125˚C Vce is measured at power busbars and not the auxiliary terminals VGE = 10V VGE = 12V VGE = 15V VGE = 20V 0 100 200 300 400 700 01 2.0 3 4 5 Collector-emitter voltage, Vce - (V) 600 500 Common emitter Tcase = 25˚C Vce is measured at power busbars and not the auxiliary terminals VGE = 10V VGE = 12V VGE = 15V VGE = 20V Fig.4 Typical switching energy vs collector current 0 5 10 15 20 25 30 35 40 45 0 50 100 150 200 250 300 350 400 Collector current, IC - (A) Conditions: Tcase = 125ºC Vcc = 300V Rg = 4.7 ohms Eon Eoff Erec Fig.5 Typical switching energy vs gate resistance 0 10 20 30 40 50 60 2 10121416 Gate resistance, Rg - (Ohms) 468 Eoff Eon Erec |
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