BSP75NTA datasheet(4/8 Pages) ZETEX

Part #	BSP75NTA

Description	60V self-protected low-side IntellifetTM MOSFET switch

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Manufacturer	ZETEX [Zetex Semiconductors]

Direct Link	http://www.diodes.com/

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4 / 8 page

BSP75N

Issue 4 - September 2006

4

www.zetex.com

Electrical characteristics (at TAMB = 25°C unless otherwise stated)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Conditions

Static characteristics

Drain-source clamp voltage

VDS(AZ)

60

70

75

V

ID=10mA

Off-state drain current

IDSS

0.1

3

AVDS=12V, VIN=0V

Off-state drain current

IDSS

315

AVDS=32V, VIN=0V

Input threshold voltage (*)

NOTES:

(*) The drain current is limited to a reduced value when VDS exceeds a safe level.

VIN(th)

12.1

V

VDS=VGS, ID=1mA

Input current

IIN

0.7

1.2

mA

VIN=+5V

Input current

IIN

1.5

2.7

mA

VIN=+7V

Input current

IIN

47

mA

VIN=+10V

Static drain-source on-state

resistance

RDS(on)

520

675

m

VIN=+5V, ID=0.7A

Static drain-source on-state

resistance

RDS(on)

385

550

m

VIN=+10V, ID=0.7A

Current limit (†)

(†) Protection features may operate outside spec for VIN<4.5V.

ID(LIM)

0.7

1.0

1.5

A

VIN=+5V, VDS>5V

Current limit(†)

ID(LIM)

1.0

1.8

2.3

A

VIN=+10V, VDS>5V

Dynamic characteristics

Turn-on time (VIN to 90% ID)ton

3.0

10

sRL=22 , VDD=12V,

VIN=0 to +10V

Turn-off time (VIN to 90% ID)toff

13

20

sRL=22 , VDD=12V,

VIN=+10V to 0V

Slew rate on (70 to 50% VDD)-dVDS/dton

820

V/ sRL=22 , VDD=12V,

VIN=0 to +10V

Slew rate off (50 to 70% VDD)DVDS/dtoff

3.2

10

V/ sRL=22 , VDD=12V,

VIN=+10V to 0V

Protection functions (‡)

(‡) Integrated protection functions are designed to prevent IC destruction under fault conditions described in the

datasheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not designed

for continuous, repetitive operation.

Required input voltage for

over temperature protection

VPROT

4.5

V

Thermal overload trip

temperature

TJT

150

175

°C

Thermal hysteresis

1

°C

Unclamped single pulse

inductive energy Tj=25°C

EAS

550

mJ

ID(ISO)=0.7A,

VDD=32V

Unclamped single pulse

inductive energy Tj=150°C

200

mJ

ID(ISO)=0.7A,

VDD=32V

Inverse diode

Source drain voltage

VSD

1V

VIN=0V, -ID=1.4A

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