BSS80C-CJ datasheet(1/1 Pages) ZETEX

Part #	BSS80C-CJ

Description	SOT23 PNP SILICON PLANAR SWITCHING TRANSISTORS

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Manufacturer	ZETEX [Zetex Semiconductors]

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SOT23 PNP SILICON PLANAR

SWITCHING TRANSISTORS

ISSUE 2 SEPTEMBER 95

7

PARTMARKING DETAIL

BSS80B - CH

BSS80C - CJ

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

VALUE

UNIT

Collector-Base Voltage

VCBO

-60

V

Collector-Emitter Voltage

VCEO

-40

V

Emitter-Base Voltage

VEBO

-5

V

Peak Pulse Current

ICM

-800

mA

Power Dissipation at Tamb=25°C

PTOT

330

mW

Operating and Storage Temperature Range

tj:tstg

-55 to +150

°C

ELECTRICAL CHARACTERISTICS (at Tamb= 25°C).

PARAMETER

SYMBOL MIN.

MAX. UNIT

CONDITIONS.

Collector-Base

Breakdown Voltage

V(BR)CBO

-60

V

IC=-10µA

Collector-Emitter

Breakdown Voltage

V(BR)CEO

-40

V

IC=-10mA

Emitter-Base

Breakdown Voltage

V(BR)EBO

-5

IE=-10mA

Collector Cut-Off

Current

ICBO

-10

nA

µ

A

VCB=-50V,

VCB=-50V, Ta=150oC

Emitter Cut-Off

Current

IEBO

-10

nA

VBE=-3V

Collector-Emitter

Saturation Voltage

VCE(sat)

-0.4

-1.6

mV

V

IC=-150mA,VCE=-10V

Static Forward

Current

Transfer Ratio

BSS80B

BSS80C

hFE

40

100

120

300

IC=150mA,VCE=10V

Transition Frequency

fT

200

MHz

VCE=-20V,IC=-50mA

f=100MHz

Output Capacitance

Cobo

8pF

VCB=-10V,f=1MHz

Delay Time

td

10

ns

VCC=-30V, IC=-150mA

IB1=-IB2=-15mA

Rise Time

tr

40

ns

Storage Time

ts

80

ns

Fall Time

tf

30

ns

BSS80B

BSS80C

C

B

E

SOT23

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