TEPT5600

Document Number 84768

Rev. 1.3, 28-Nov-06

Vishay Semiconductors

www.vishay.com

1

94 8390

Ambient Light Sensor

Description

TEPT5600 is a silicon NPN epitaxial planar photo

transistor in a standard T-1 3/4" plastic package.

Peak of responsivity is in the visible spectrum. Infra-

red spectrum is suppressed.

Features

• Responsivity adapted to human eye

• Wide angle of half sensitivity

ϕ = ± 20°

• Lead (Pb)-free component

• Component in accordance with RoHS

2002/95/EC and WEEE 2002/96/EC

e4

Applications

• Replacement of cadmium sulfide (CdS) photo

resistors

• Ambient light sensor

Absolute Maximum Ratings

Basic Characteristics

Parameter

Test condition

Symbol

Value

Unit

Collector emitter voltage

6V

Emitter collector voltage

1.5

V

Collector current

20

mA

Total power dissipation

100

mW

Junction temperature

100

°C

Operating temperature range

- 40 to + 85

°C

Storage temperature range

- 40 to + 100

°C

Soldering temperature

2 mm distance to package, t

≤ 3 s

260

°C

Thermal resistance junction/

ambient

450

K/W

Parameter

Test condition

Symbol

Min

Typ.

Max

Unit

Collector emitter breakdown

voltage

6V

Collector dark current

350

nA

Collector-emitter capacitance

16

pF

Photo current

25

70

140

µA

350

µA

Angle of half sensitivity

ϕ

± 20

deg

Wavelength of peak sensitivity

λ

p

570

nm

Range of spectral bandwidth

λ

0.1

360 to 970

nm