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LM26001MXAX Datasheet(PDF) 4 Page - National Semiconductor (TI) |
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LM26001MXAX Datasheet(HTML) 4 Page - National Semiconductor (TI) |
4 / 17 page Electrical Characteristics Specifications in standard type are for T J = 25˚C only, and limits in boldface type apply over the junction temperature (T J) range of -40˚C to +125˚C. Unless otherwise stated, Vin=12V. Minimum and Maximum limits are guaranteed through test, design, or statistical correlation. Typical values represent the most likely parametric norm at T J = 25˚C, and are provided for reference purposes only. (Note 5) (Continued) Symbol Parameter Conditions Min Typ Max Unit T OFFMIN Minimum Off-time 365 ns T ONMIN Minimum On-time 155 ns TH SLEEP_HYS Sleep mode threshold hysteresis VFB rising, % of TH WAKE 101.2 % TH WAKE Wake up threshold Measured at falling FB, COMP = 0.6V 1.234 V I BOOT BOOT pin leakage current BOOT = 16V, SW = 10V 0.0006 5.0 µA Protection I LIMPK Peak Current Limit 1.85 2.5 3.2 A V FB_SC Short circuit frequency foldback threshold Measured at FB falling 0.87 V F_min_sc Min Frequency in foldback VFB < 0.3V 71 kHz V TH_PGOOD Power Good Threshold Measured at FB, PGOOD rising 89 92 95 % PGOOD hysteresis 2 7 8 % I PGOOD_HI PGOOD leakage current PGOOD = 5V 0.2 nA R DS_PGOOD PGOOD on resistance PGOOD sink current = 500 µA 64 Ω V UVLO Under-voltage Lock-Out Threshold Vin falling , shutdown, VDD = VIN 2.60 2.9 3.20 V Vin rising, soft-start, VDD = VIN 3.60 3.9 4.20 TSD Thermal Shutdown Threshold 160 ˚C θ JA Thermal resistance Power dissipation = 1W, 0 lfpm air flow 38 ˚C/W Logic Vth EN Enable Threshold voltage 0.8 1.1 1.4 V Enable hysteresis 164 mV I EN_Source EN source current EN = 0V 4.5 µA V TH_FPWM FPWM threshold 0.8 1.2 1.6 V I FPWM FPWM leakage current FPWM = 5V 66 nA EA gm Error amp trans-conductance 400 670 1000 µmho I COMP COMP source current VCOMP = 0.9V 56 µA COMP sink current VCOMP = 0.9V 39 µA V COMP COMP pin voltage range 0.64 1.27 V Note 1: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is intended to be functional, but do not guarantee specific performance limits. For guaranteed specifications and test conditions, see the Electrical Characteristics. Note 2: The maximum allowable power dissipation is a function of the maximum junction temperature, TJ_MAX, the junction-to-ambient thermal resistance, θJA, and the ambient temperature, TA. The maximum allowable power dissipation at any ambient temperature is calculated using: PD_MAX =(TJ_MAX -TA)/θJA. The maximum power dissipation of 2.6W is determined using TA = 25˚C, θJA = 38˚C/W, and TJ_MAX = 125˚C. Note 3: The human body model is a 100 pF capacitor discharged through a 1.5 k Ω resistor into each pin. The machine model is a 200pF capacitor discharged directly into each pin. The charged device model is per JESD22-C101-C. Note 4: Below 4.0V input, power dissipation may increase due to increased RDS(ON). Therefore, a minimum input voltage of 4.0V is required to operate continuously within specification. A minimum of 3.9V (typical) is also required for startup. Note 5: All room temperature limits are 100% production tested. All limits at temperature extremes are guaranteed through correlation using standard Statistical Quality Control (SQC) methods. All limits are used to calculate Average Outgoing Quality Level (AOQL). Note 6: Iq and ISD specify the current into the VIN pin. IBIAS is the current into the VBIAS pin when the VBIAS voltage is greater than 3V. All quiescent current specifications apply to non-switching operation. Note 7: The absolute maximum specification applies to DC voltage. An extended negative voltage limit of -2V applies for a pulse of up to 1µs, and -1V for a pulse of up to 20µs. www.national.com 4 |
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