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1N5400-G Datasheet(PDF) 1 Page - Comchip Technology |
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1N5400-G Datasheet(HTML) 1 Page - Comchip Technology |
1 / 2 page Page1 Comchip Technology Corporation . Tel:510-657-8671 . Fax: 510-657-8921 . www.comchiptech.com Case: Molded plastic DO-201AD Epoxy: UL 94V-0 rate flame retardant Terminals: Solderable per MIL-STD-202 method 208 guaranteed Polarity: Color band denotes cathode end Mounting position: Any Weight: 1.1gram Mechanical Data: Maximum Ratings and Electrical Characteristics Low forward voltage drop High current capability Low reverse leakage current High surge current capability Features: Voltage: 50 ~ 1000 Volts Current: 3.0 Amp 1N5400-G thru 1N5408-G (RoHS Device) General Purpose Rectifier “-G” suffix designated RoHS compliant version Note: (1) Thermal resistance junction to lead. (2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC. DO-201AD Rating at 25ºC unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate currently by 20%. Characteristics Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Max. Average Forward Rectified Current@ TL = 75ºC Peak Forward Surge Current 8.3ms Single half-sine-wave superimposed on rated load (JEDEC Method) Max. Instantaneous Forward Voltage @ 3.0A Max. DC Reverse Current @ TJ = 25ºC At Rated DC Blocking Voltage @ TJ = 100ºC Typical Junction Capacitance (Note1) Typical Thermal Resistance (Note2) Operating Junction and Storage Temperature Range 1N 5400-G 50 35 50 1N 5401-G 100 70 100 1N 5402-G 200 140 200 1N 5404-G 400 280 400 3.0 150 0.95 5.0 250 40 15 -55 to +125 1N 5406-G 600 420 600 1N 5407-G 800 560 800 1N 5406-G 1000 700 1000 UNIT V V V A A V uA uA pF ºC/W ºC Symbol VRRM VRMS VDC I(AV) IFSM VF IR CJ RθJC TJ, TSTG .052 (1.3) .048 (1.2) DIA. 1.0 (25.4) MIN. 1.0 (25.4) MIN. .375 (9.5) .285 (7.2) .210 (5.3) .190 (4.8) Dimensions in inches and (millimeters) |
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