1999 May 18

2

Philips Semiconductors

Preliminary specification

NPN resistor-equipped transistor

PDTC124XEF

FEATURES

• Power dissipation comparable to SOT23

• Built-in bias resistors R1 and R2 (typ. 22 kΩ and 47 kΩ

respectively)

• Simplification of circuit design

• Reduces number of components and board space.

APPLICATIONS

• Especially suitable for space reduction in interface and

driver circuits

• Inverter circuit configurations without use of external

resistors.

DESCRIPTION

NPN resistor-equipped transistor encapsulated in an ultra

small SC-89 (SOT490) plastic SMD package.

PNP complement: PDTA124XEF.

MARKING

PINNING

TYPE NUMBER

MARKING CODE

PDTC124XEF

32

PIN

DESCRIPTION

1

base/input

2

emitter/ground

3

collector/output

Fig.1

Simplified outline (SC-89; SOT490) and

symbol.

handbook, halfpage

MAM412

1

2

3

R1

R2

12

Top view

3

Fig.2 Equivalent inverter symbol.

MGA893 - 1

1

3

2