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MGFC42V3436 Datasheet(PDF) 1 Page - Mitsubishi Electric Semiconductor |
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MGFC42V3436 Datasheet(HTML) 1 Page - Mitsubishi Electric Semiconductor |
1 / 2 page MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC42V3436 3.4 - 3.6GHz BAND 16W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC42V3436 is an internally impedance-matched OUTLINE DRAWING Unit: millimeters GaAs power FET especially designed for use in 3.4 - 3.6 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability. FEATURES Class A operation Internally matched to 50(ohm) system High output power P1dB = 16W (TYP.) @ f=3.4 - 3.6 GHz High power gain GLP = 14 dB (TYP.) @ f=3.4 - 3.6GHz High power added efficiency P.A.E. = 37 % (TYP.) @ f=3.4 - 3.6GHz Low distortion [item -51] IM3=-45dBc(Min.) @Po=32dBm S.C.L. APPLICATION item 01 : 3.4 - 3.6 GHz band power amplifier item 51 : 3.4 - 3.6 GHz band digital radio communication QUALITY GRADE IG (1): GATE RECOMMENDED BIAS CONDITIONS (2): SOURCE (FLANGE) VDS = 10 (V) GF-18 (3): DRAIN ID = 4.5 (A) RG=25 (ohm) ABSOLUTE MAXIMUM RATINGS (Ta=25deg.C) < Keep safety first in your circuit designs! > Mitsubishi Electric Corporation puts the maximum effort into Symbol Parameter Ratings Unit making semiconductor products better and more reliable, VGDO Gate to drain voltage -15 V but there is always the possibility that trouble may occur VGSO Gate to source voltage -15 V with them. Trouble with semiconductors may lead to personal ID Drain current 15 A injury, fire or property damage. Remember to give due IGR Reverse gate current -40 mA consideration to safety when making your circuit designs, IGF Forward gate current 84 mA with appropriate measures such as (1)placement of PT Total power dissipation *1 78.9 W substitutive, auxiliary circuits, (2)use of non-flammable Tch Channel temperature 175 deg.C material or (3)prevention against any malfunction or mishap. Tstg Storage temperature -65 / +175 deg.C *1 : Tc=25deg.C ELECTRICAL CHARACTERISTICS (Ta=25deg.C) Symbol Parameter Test conditions Limits Unit Min. Typ. Max. IDSS Saturated drain current VDS = 3V , VGS = 0V - 11 - A gm Transconductance VDS = 3V , ID = 4.4A - 4 - S VGS(off) Gate to source cut-off voltage VDS = 3V , ID = 80mA - - -4.5 V P1dB Output power at 1dB gain compression 41.5 42.5 - dBm GLP Linear power gain VDS=10V, ID(RF off)=4.5A, f=3.4 - 3.6GHz 12 14 - dB ID Drain current - 4.5 - A P.A.E. Power added efficiency - 37 - % IM3 3rd order IM distortion *1 -42 -45 - dBc Rth(ch-c) Thermal resistance *2 delta Vf method - - 1.9 deg.C/W *1 : item -51, 2 tone test, Po=32dBm Single Carrier Level, f=3.6GHz, delta f=5MHz *2 : Channel-case June/2004 MITSUBISHI ELECTRIC R1.25 0.6+/-0.15 (1) 24+/-0.3 20.4+/-0.2 13.4 (3) R1.2 (2) |
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