MITSUBISHI SEMICONDUCTOR <GaAs FET>

MGFC42V3436

3.4 - 3.6GHz BAND 16W INTERNALLY MATCHED GaAs FET

DESCRIPTION

The MGFC42V3436 is an internally impedance-matched

OUTLINE DRAWING

Unit: millimeters

GaAs power FET especially designed for use in 3.4 - 3.6

GHz band amplifiers. The hermetically sealed metal-ceramic

package guarantees high reliability.

FEATURES

Class A operation

Internally matched to 50(ohm) system

High output power

P1dB = 16W (TYP.) @ f=3.4 - 3.6 GHz

High power gain

GLP = 14 dB (TYP.) @ f=3.4 - 3.6GHz

High power added efficiency

P.A.E. = 37 % (TYP.) @ f=3.4 - 3.6GHz

Low distortion [item -51]

IM3=-45dBc(Min.) @Po=32dBm S.C.L.

APPLICATION

item 01 : 3.4 - 3.6 GHz band power amplifier

item 51 : 3.4 - 3.6 GHz band digital radio communication

QUALITY GRADE

IG

(1): GATE

RECOMMENDED BIAS CONDITIONS

(2): SOURCE (FLANGE)

VDS = 10 (V)

GF-18

(3): DRAIN

ID = 4.5 (A)

RG=25 (ohm)

ABSOLUTE MAXIMUM RATINGS

(Ta=25deg.C)

< Keep safety first in your circuit designs! >

Mitsubishi Electric Corporation puts the maximum effort into

Symbol

Parameter

Ratings

Unit

making semiconductor products better and more reliable,

VGDO

Gate to drain voltage

-15

V

but there is always the possibility that trouble may occur

VGSO

Gate to source voltage

-15

V

with them. Trouble with semiconductors may lead to personal

ID

Drain current

15

A

injury, fire or property damage. Remember to give due

IGR

Reverse gate current

-40

mA

consideration to safety when making your circuit designs,

IGF

Forward gate current

84

mA

with appropriate measures such as (1)placement of

PT

Total power dissipation

*1

78.9

W

substitutive, auxiliary circuits, (2)use of non-flammable

Tch

Channel temperature

175

deg.C

material or (3)prevention against any malfunction or mishap.

Tstg

Storage temperature

-65 / +175

deg.C

*1 : Tc=25deg.C

ELECTRICAL CHARACTERISTICS

(Ta=25deg.C)

Symbol

Parameter

Test conditions

Limits

Unit

Min.

Typ.

Max.

IDSS

Saturated drain current

VDS = 3V , VGS = 0V

-

11

-

A

gm

Transconductance

VDS = 3V , ID = 4.4A

-

4

-

S

VGS(off)

Gate to source cut-off voltage

VDS = 3V , ID = 80mA

-

-

-4.5

V

P1dB

Output power at 1dB gain

compression

41.5

42.5

-

dBm

GLP

Linear power gain

VDS=10V, ID(RF off)=4.5A, f=3.4 - 3.6GHz

12

14

-

dB

ID

Drain current

-

4.5

-

A

P.A.E.

Power added efficiency

-

37

-

%

IM3

3rd order IM distortion

*1

-42

-45

-

dBc

Rth(ch-c)

Thermal resistance

*2

delta Vf method

-

-

1.9

deg.C/W

*1 : item -51, 2 tone test, Po=32dBm Single Carrier Level, f=3.6GHz, delta f=5MHz

*2 : Channel-case

June/2004

MITSUBISHI

ELECTRIC

R1.25

0.6+/-0.15

(1)

24+/-0.3

20.4+/-0.2

13.4

(3)

R1.2

(2)