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MR1A16AVYS35 Datasheet(PDF) 11 Page - Freescale Semiconductor, Inc

Part # MR1A16AVYS35
Description  64K x 16-Bit 3.3-V Asynchronous Magnetoresistive RAM
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Manufacturer  FREESCALE [Freescale Semiconductor, Inc]
Direct Link  http://www.freescale.com
Logo FREESCALE - Freescale Semiconductor, Inc

MR1A16AVYS35 Datasheet(HTML) 11 Page - Freescale Semiconductor, Inc

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Timing Specifications
MR0A16A Advanced Information Data Sheet, Rev. 0
Freescale Semiconductor
11
Table 11. Write Cycle Timing 2 (E Controlled)1, 2, 3, 4, 5
Parameter
Symbol
Min
Max
Unit
Write cycle time6
tAVAV
35
ns
Address set-up time
tAVEL
0—
ns
Address valid to end of write (G high)
tAVEH
18
ns
Address valid to end of write (G low)
tAVEH
20
ns
Enable to end of write (G high)
tELEH
tELWH
15
ns
Enable to end of write (G low)7, 8
tELEH
tELWH
15
ns
Data valid to end of write
tDVEH
10
ns
Data hold time
tEHDX
0—
ns
Write recovery time
tEHAX
12
ns
NOTES:
1
A write occurs during the overlap of E low and W low.
2
Due to product sensitivities to noise, power supplies must be properly grounded and decoupled
and bus contention conditions must be minimized or eliminated during read and write cycles.
3
If G goes low at the same time or after W goes low, the output will remain in a high-impedance
state.
4
After W, E, or UB/LB has been brought high, the signal must remain in steady-state high for a
minimum of 2 ns.
5
The minimum time between E being asserted low in one cycle to E being asserted low in a
subsequent cycle is the same as the minimum cycle time allowed for the device.
6
All write cycle timings are referenced from the last valid address to the first transition address.
7
If E goes low at the same time or after W goes low, the output will remain in a high-impedance
state.
8
If E goes high at the same time or before W goes high, the output will remain in a high-impedance
state.


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