MR0S16AVYS35 datasheet(5/22 Pages) FREESCALE

Part #	MR0S16AVYS35

Description	256K x 16-Bit 3.3-V Asynchronous Magnetoresistive RAM

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Manufacturer	FREESCALE [Freescale Semiconductor, Inc]

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Electrical Specifications

MR2A16A Data Sheet, Rev. 4

Freescale Semiconductor

5

Table 4. Operating Conditions

Parameter

Symbol

Min

Typ

Max

Unit

Power supply voltage

MR2A16ATS35C (Commercial)

MR2A16ACYS35 (Industrial)

MR2A16AVYS35 (Extended)

VDD

3.01

3.02

3.3

3.6

V

Write inhibit voltage

MR2A16ATS35C (Commercial)

MR2A16ACYS35 (Industrial)

MR2A16AVYS35 (Extended)

VWI

2.5

2.7

3.01

3.02

V

Input high voltage

VIH

2.2

—

VDD +

0.33

V

Input low voltage

VIL

–0.54

—

0.8

V

Operating temperature

MR2A16ATS35C (Commercial)

MR2A16ACYS35 (Industrial)

MR2A16AVYS35 (Extended)

TA

0

-40

70

85

105

˚C

NOTES:

1

After power up or if VDD falls below VWI, a waiting period of 2 μs must be observed, and E and W

must remain high for 2

μs. Memory is designed to prevent writing for all input pin conditions if V

DD

falls below minimum VWI.

2

After power up or if VDD falls below VWI, a waiting period of 2 ms must be observed, and E and W

must remain high for 2 ms. Memory is designed to prevent writing for all input pin conditions if VDD

falls below minimum VWI.

3

VIH (max) = VDD + 0.3 Vdc; VIH (max) = VDD + 2.0 Vac (pulse width ≤ 10 ns) for I ≤ 20.0 mA.

4

VIL (min) = –0.5 Vdc; VIL (min) = –2.0 Vac (pulse width ≤ 10 ns) for I ≤ 20.0 mA.

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MR0S16AVYS35 Datasheet(PDF) 5 Page - Freescale Semiconductor, Inc

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