MRF6S21140HSR3 datasheet(5/11 Pages) FREESCALE

Part #	MRF6S21140HSR3

Description	RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

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Manufacturer	FREESCALE [Freescale Semiconductor, Inc]

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MRF6S21140HR3 MRF6S21140HSR3

5

RF Device Data

Freescale Semiconductor

TYPICAL CHARACTERISTICS

−21

−12

−15

−18

−21

−12

−15

−18

2220

2060

IRL

Gps

ACPR

IM3

f, FREQUENCY (MHz)

Figure 3. 2-Carrier W-CDMA Broadband Performance @ Pout = 30 Watts Avg.

2200

2180

2160

2140

2120

2100

2080

15.6

15.5

−44

30

28

26

−32

−36

−40

2220

2060

IRL

Gps

ACPR

IM3

f, FREQUENCY (MHz)

Figure 4. 2-Carrier W-CDMA Broadband Performance @ Pout = 60 Watts Avg.

2200

2180

2160

2140

2120

2100

2080

15

14.9

−33

42

40

38

−24

−27

−30

Figure 5. Two-Tone Power Gain versus

Output Power

Figure 6. Third Order Intermodulation Distortion

versus Output Power

100

12

17

1

IDQ = 1800 mA

1500 mA

Pout, OUTPUT POWER (WATTS) PEP

16

15

14

10

400

−55

−25

1

IDQ = 600 mA

Pout, OUTPUT POWER (WATTS) PEP

1800 mA

100

−30

−35

−40

−45

−50

−60

VDD = 28 Vdc

f1 = 2135 MHz, f2 = 2145 MHz

Two −Tone Measurements, 10 MHz Tone Spacing

10

ηD

15.4

15.3

15.2

15.1

15

VDD = 28 Vdc, Pout = 30 W (Avg.),

IDQ = 1200 mA, 2−Carrier W−CDMA,

10 MHz Carrier Spacing, 3.84 MHz Channel Bandwidth,

PAR = 8.5 dB @ 0.01% Probability (CCDF)

14.8

14.7

14.6

14.5

14.4

VDD = 28 Vdc, Pout = 60 W (Avg.),

IDQ = 1200 mA, 2−Carrier W−CDMA,

10 MHz Carrier Spacing, 3.84 MHz Channel

Bandwidth, PAR = 8.5 dB @ 0.01%

Probability (CCDF)

13

1200 mA

900 mA

600 mA

VDD = 28 Vdc

f1 = 2135 MHz, f2 = 2145 MHz

Two −Tone Measurements, 10 MHz Tone Spacing

−20

1500 mA

900 mA

1200 mA

400

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MRF6S21140HSR3 Datasheet(PDF) 5 Page - Freescale Semiconductor, Inc

MRF6S21140HSR3 Datasheet(HTML) 5 Page - Freescale Semiconductor, Inc

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