MRF7S21170HR3_07 datasheet(6/13 Pages) FREESCALE

Part #	MRF7S21170HR3

Description	RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

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Manufacturer	FREESCALE [Freescale Semiconductor, Inc]

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RF Device Data

Freescale Semiconductor

MRF7S21170HR3 MRF7S21170HSR3

TYPICAL CHARACTERISTICS

2220

2060

IRL

Gps

PARC

f, FREQUENCY (MHz)

Figure 3. Output Peak-to-Average Ratio Compression (PARC)

Broadband Performance @ Pout = 50 Watts Avg.

VDD = 28 Vdc, Pout = 50 W (Avg.), IDQ = 1400 mA

Single −Carrier W−CDMA, 3.84 MHz Channel

Bandwidth, PAR = 7.5 dB @ 0.01% Probability (CCDF)

2160

2120

2100

9

17

16

15

14

13

12

11

10

−3

36

34

32

30

28

0

−1

−2

ηD

−25

−5

−10

−15

−20

2140

2080

2200

2180

2220

2060

IRL

Gps

PARC

f, FREQUENCY (MHz)

Figure 4. Output Peak-to-Average Ratio Compression (PARC)

Broadband Performance @ Pout = 84 Watts Avg.

VDD = 28 Vdc, Pout = 84 W (Avg.), IDQ = 1400 mA

Single −Carrier W−CDMA, 3.84 MHz Channel

Bandwidth, PAR = 7.5 dB @ 0.01% Probability (CCDF)

2160

2120

2100

9

17

16

15

14

13

12

11

10

−5

44

42

40

38

36

−2

−3

−4

ηD

−25

−5

−10

−15

−20

2140

2080

2200

2180

Figure 5. Two-Tone Power Gain versus

Output Power

100

13

18

1

Pout, OUTPUT POWER (WATTS) PEP

VDD = 28 Vdc, f1 = 2135 MHz, f2 = 2145 MHz

Two −Tone Measurements, 10 MHz Tone Spacing

16

15

14

10

400

17

Figure 6. Third Order Intermodulation Distortion

versus Output Power

−10

Pout, OUTPUT POWER (WATTS) PEP

10

−20

−30

−40

100

−60

−50

VDD = 28 Vdc, f1 = 2135 MHz, f2 = 2145 MHz

Two −Tone Measurements, 10 MHz Tone Spacing

1

400

IDQ = 2100 mA

1750 mA

700 mA

1050 mA

1400 mA

IDQ = 700 mA

1750 mA

1050 mA

1400 mA

2100 mA

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MRF7S21170HR3 Datasheet(PDF) 6 Page - Freescale Semiconductor, Inc

MRF7S21170HR3 Datasheet(HTML) 6 Page - Freescale Semiconductor, Inc

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