2

RF Device Data

Freescale Semiconductor

MWE6IC9100NR1 MWE6IC9100GNR1 MWE6IC9100NBR1

Table 1. Maximum Ratings

Rating

Symbol

Value

Unit

Drain-Source Voltage

-0.5, +66

Vdc

Gate-Source Voltage

-0.5, +6

Vdc

Storage Temperature Range

-65 to +200

°C

Operating Junction Temperature

200

°C

Table 2. Thermal Characteristics

Characteristic

Symbol

Unit

Thermal Resistance, Junction to Case

GSM Application

GSM EDGE Application

1.82

0.38

1.77

0.44

°C/W

Table 3. ESD Protection Characteristics

Test Methodology

Class

Human Body Model (per JESD22-A114)

2 (Minimum)

Machine Model (per EIA/JESD22-A115)

B (Minimum)

Charge Device Model (per JESD22-C101)

III (Minimum)

Table 4. Moisture Sensitivity Level

Test Methodology

Rating

Package Peak Temperature

Unit

Per JESD 22-A113, IPC/JEDEC J-STD-020

3

260

°C

Characteristic

Symbol

Min

Typ

Max

Unit

Stage 1 — Off Characteristics

Zero Gate Voltage Drain Leakage Current

—

—

10

μAdc

Zero Gate Voltage Drain Leakage Current

—

—

1

μAdc

Gate-Source Leakage Current

—

—

10

μAdc

Stage 1 — On Characteristics

Gate Threshold Voltage

1.5

2

3.5

Vdc

Gate Quiescent Voltage

—

2.7

—

Vdc

Fixture Gate Quiescent Voltage

6

9.4

12

Vdc

1. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.

Select Documentation/Application Notes - AN1955.

2. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access the MTTF

calculators by product.

(continued)