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MR2A08AVTS35C Datasheet(PDF) 1 Page - Freescale Semiconductor, Inc |
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MR2A08AVTS35C Datasheet(HTML) 1 Page - Freescale Semiconductor, Inc |
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1 / 22 page  © Freescale Semiconductor, Inc., 2004, 2006, 2007. All rights reserved. Freescale Semiconductor Data Sheet Document Number: MR2A16A Rev. 4, 6/2007 Introduction The MR2A16A is a 4,194,304-bit magnetoresistive random access memory (MRAM) device organized as 262,144 words of 16 bits. The MR2A16A is equipped with chip enable (E), write enable (W), and output enable (G) pins, allowing for significant system design flexibility without bus contention. Because the MR2A16A has separate byte-enable controls (LB and UB), individual bytes can be written and read. MRAM is a nonvolatile memory technology that protects data in the event of power loss and does not require periodic refreshing. The MR2A16A is the ideal memory solution for applications that must permanently store and retrieve critical data quickly. The MR2A16A is available in a 400-mil, 44-lead plastic small-outline TSOP type-II package with an industry-standard center power and ground SRAM pinout. The MR2A16A is available in Commercial (0˚C to 70˚C), Industrial (-40˚C to 85˚C) and Extended (-40˚C to 105˚C) ambient temperature ranges. Features • Single 3.3-V power supply • Commercial temperature range (0˚C to 70˚C), Industrial temperature range (-40˚C to 85˚C) and Extended temperature range (-40˚C to 105˚C) • Symmetrical high-speed read and write with fast access time (35 ns) • Flexible data bus control — 8 bit or 16 bit access • Equal address and chip-enable access times • Automatic data protection with low-voltage inhibit circuitry to prevent writes on power loss • All inputs and outputs are transistor-transistor logic (TTL) compatible • Fully static operation • Full nonvolatile operation with 20 years minimum data retention 256K x 16-Bit 3.3-V Asynchronous Magnetoresistive RAM MR2A16A 44-TSOP Case 924A-02 |
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