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IRF530NSPBF Datasheet(PDF) 1 Page - International Rectifier |
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IRF530NSPBF Datasheet(HTML) 1 Page - International Rectifier |
1 / 10 page IRF530NSPbF IRF530NLPbF HEXFET® Power MOSFET 03/10/04 Parameter Typ. Max. Units RθJC Junction-to-Case ––– 2.15 RθJA Junction-to-Ambient (PCB Mounted,steady-state)** ––– 40 Thermal Resistance www.irf.com 1 VDSS = 100V RDS(on) = 90mΩ ID = 17A S D G Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on- resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRF530NL) is available for low-profile applications. l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description Absolute Maximum Ratings Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 17 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 12 A IDM Pulsed Drain Current 60 PD @TA = 25°C Power Dissipation 3.8 W PD @TC = 25°C Power Dissipation 70 W Linear Derating Factor 0.47 W/°C VGS Gate-to-Source Voltage ± 20 V IAR Avalanche Current 9.0 A EAR Repetitive Avalanche Energy 7.0 mJ dv/dt Peak Diode Recovery dv/dt 7.4 V/ns TJ Operating Junction and -55 to + 175 TSTG Storage Temperature Range °C Soldering Temperature, for 10 seconds 300 (1.6mm from case ) D2Pak IRF530NSPbF TO-262 IRF530NLPbF °C/W PD - 95100 |
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