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PEMD48 Datasheet(PDF) 5 Page - NXP Semiconductors |
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PEMD48 Datasheet(HTML) 5 Page - NXP Semiconductors |
5 / 12 page 2001 Nov 07 5 Philips Semiconductors Product specification NPN/PNP resistor-equipped transistors; R1, R2 = 47 k Ω, 47 kΩ and 2.2 kΩ, 47 kΩ PEMD48 handbook, halfpage 103 102 10 1 MHC007 10−1 1 (3) 10 IC (mA) hFE 102 (1) (2) Fig.3 DC current gain as a function of collector current; typical values. TR1 (NPN); VCE =5V. (1) Tamb = 150 °C. (2) Tamb =25 °C. (3) Tamb = −40 °C. handbook, halfpage 10−1 10−2 MHC006 10−1 1 (3) VCEsat (V) 10 IC (mA) 102 (2) (1) Fig.4 Collector-emitter saturation voltage as a function of collector current; typical values. TR1 (NPN); IC/IB = 20. (1) Tamb = 100 °C. (2) Tamb =25 °C. (3) Tamb = −40 °C. handbook, halfpage 10 1 10−1 MHC009 10−2 10−1 1 (1) IC (mA) Vi(off) (V) 10 (2) (3) Fig.5 Input-off voltage as a function of collector current; typical values. TR1 (NPN); VCE =5V. (1) Tamb = −40 °C. (2) Tamb =25 °C. (3) Tamb = 100 °C. handbook, halfpage 102 10−1 10 1 MHC008 10−1 110 IC (mA) Vi(on) (V) 102 (3) (2) (1) Fig.6 Input-on voltage as a function of collector current; typical values. TR1 (NPN); VCE = 0.3 V. (1) Tamb = −40 °C. (2) Tamb =25 °C. (3) Tamb = 100 °C. |
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