PH2222 datasheet(3/8 Pages) PHILIPS

Part #	PH2222

Description	NPN switching transistor

Download	8 Pages

Scroll/Zoom	100%

Manufacturer	PHILIPS [NXP Semiconductors]

Direct Link	http://www.nxp.com

Logo

3 / 8 page

1999 Apr 27

3

Philips Semiconductors

Product speciﬁcation

NPN switching transistor

PH2222A

THERMAL CHARACTERISTICS

Note

1. Transistor mounted on an FR4 printed-circuit board.

CHARACTERISTICS

Tj =25 °C unless otherwise speciﬁed.

Note

1. Pulse test: tp ≤ 300 µs; δ≤ 0.02.

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth j-a

thermal resistance from junction to ambient

note 1

250

K/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

ICBO

collector cut-off current

IE = 0; VCB =60V

−

10

nA

IE = 0; VCB =60V; Tamb = 150 °C

−

10

µA

IEBO

emitter cut-off current

IC = 0; VEB =3V

−

10

nA

hFE

DC current gain

IC = 0.1 mA; VCE =10V

35

−

IC = 1 mA; VCE =10V

50

−

IC = 10 mA; VCE =10V

75

−

IC = 10 mA; VCE =10V; Tamb = −55 °C35

−

IC = 150 mA; VCE = 1 V; note 1

50

−

IC = 150 mA; VCE = 10 V; note 1

100

300

IC = 500 mA; VCE = 10 V; note 1

40

−

VCEsat

collector-emitter saturation voltage

IC = 150 mA; IB = 15 mA; note 1

−

300

mV

IC = 500 mA; IB = 50 mA; note 1

−

1V

VBEsat

base-emitter saturation voltage

IC = 150 mA; IB = 15 mA; note 1

0.6

1.2

V

IC = 500 mA; IB = 50 mA; note 1

−

2V

Cc

collector capacitance

IE =ie = 0; VCB = 10 V; f = 1 MHz

−

8pF

Ce

emitter capacitance

IC =ic = 0; VEB = 500 mV; f = 1 MHz

−

25

pF

fT

transition frequency

IC = 20 mA; VCE = 20 V; f = 100 MHz

300

−

MHz

F

noise ﬁgure

IC = 200 µA; VCE =5V; RS =2kΩ;

f = 1 kHz; B = 200 Hz

−

4db

Switching times (between 10% and 90% levels); see Fig.2

ton

turn-on time

ICon = 150 mA; IBon =15mA;

IBoff = −15 mA

−

35

ns

td

delay time

−

15

ns

tr

rise time

−

20

ns

toff

turn-off time

−

250

ns

ts

storage time

−

200

ns

tf

fall time

−

60

ns

Similar Part No. - PH2222

Manufacturer	Part #	Datasheet	Description
Tyco Electronics	PH2226-110M	210Kb / 2P	Radar Pulsed Power Transistor, 110 Watts, 2.25-2.55 GHz, 100 uS Pulse, 10% Duty
M/A-COM Technology Solu...	PH2226-110M	107Kb / 3P	Radar Pulsed Power Transistor 110W, 2.2-2.6GHz, 100關s Pulse, 10% Duty
Tyco Electronics	PH2226-110M	107Kb / 3P	Radar Pulsed Power Transistor 110W, 2.2-2.6GHz, 100關s Pulse, 10% Duty
M/A-COM Technology Solu...	PH2226-110M	107Kb / 3P	Radar Pulsed Power Transistor
Tyco Electronics	PH2226-11OM	99Kb / 1P	Radar Pulsed Power Transistor, IlOW, loops Pulse, 10% Duty 2.25 - 2.55 GHz

More results

Similar Description - PH2222

Manufacturer	Part #	Datasheet	Description
AiT Semiconductor Inc.	MBT3904T	1Mb / 10P	SWITCHING TRANSISTOR NPN TRANSISTOR REV1.0
	MBT2222AL	832Kb / 9P	SWITCHING TRANSISTOR NPN TRANSISTOR REV1.3
	MBT5550	1,016Kb / 7P	SWITCHING TRANSISTOR NPN TRANSISTOR REV1.0
	MBT3904L	1Mb / 9P	SWITCHING TRANSISTOR NPN TRANSISTOR REV1.2
Fairchild Semiconductor	2N5772	28Kb / 4P	NPN Switching Transistor
NXP Semiconductors	2N3904	45Kb / 8P	NPN switching transistor 1999 Apr 23
	BFX85	56Kb / 8P	NPN switching transistor 1997 Apr 22
	PMBT4401	46Kb / 8P	NPN switching transistor 1999 Apr 15
	PMST3904	47Kb / 8P	NPN switching transistor 1999 Apr 22
	PZT2222A	46Kb / 8P	NPN switching transistor 1999 Apr 14
	2N3904	55Kb / 7P	NPN switching transistor 2004 Oct 11

More results

PH2222 Datasheet(PDF) 3 Page - NXP Semiconductors

PH2222 Datasheet(HTML) 3 Page - NXP Semiconductors

Similar Part No. - PH2222

Similar Description - PH2222

Html Pages

1 2 3 4 5 6 7 8

Datasheet Download

Link URL