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NTD65N03RT4G Datasheet(PDF) 2 Page - ON Semiconductor |
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NTD65N03RT4G Datasheet(HTML) 2 Page - ON Semiconductor |
2 / 8 page NTD65N03R http://onsemi.com 2 THERMAL RESISTANCE MAXIMUM RATINGS Parameter Symbol Value Unit Junction−to−Case (Drain) RqJC 2.5 °C/W Junction−to−Ambient − Steady State (Note 3) RqJA 80 Junction−to−Ambient − Steady State (Note 4) RqJA 115 ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 25 29.5 V Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/TJ 19.2 mV/ °C Zero Gate Voltage Drain Current IDSS VGS = 0 V, VDS = 20 V TJ = 25°C 1.5 mA TJ = 125°C 10 Gate−to−Source Leakage Current IGSS VDS = 0 V, VGS = "20 V "100 nA ON CHARACTERISTICS (Note 5) Gate Threshold Voltage VGS(TH) VGS = VDS, ID = 250 mA 1.0 1.74 2.0 V Negative Threshold Temperature Coefficient VGS(TH)/TJ 4.8 mV/ °C Drain−to−Source On Resistance RDS(on) VGS = 10 V, ID = 30 A 6.5 8.4 m W VGS = 4.5 V, ID = 30 A 9.7 14.6 Forward Transconductance gFS VDS = 15 V, ID = 15 A 27 mHos CHARGES, CAPACITANCES AND GATE RESISTANCE Input Capacitance Ciss VGS = 0 V, f = 1.0 MHz, VDS = 20 V 1177 1400 pF Output Capacitance Coss 555 Reverse Transfer Capacitance Crss 218 Total Gate Charge QG(TOT) VGS = 5.0 V, VDS = 10 V, ID = 30 A 12.2 16 nC Threshold Gate Charge QG(TH) 1.5 Gate−to−Source Charge QGS 2.95 Gate−to−Drain Charge QGD 6.08 SWITCHING CHARACTERISTICS (Note 6) Turn−On Delay Time td(on) VGS = 10 V, VDS = 25 V, ID = 30 A, RG = 3.0 W 6.3 ns Rise Time tr 18.6 Turn−Off Delay Time td(off) 20.3 Fall Time tf 8.8 DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VSD VGS = 0 V, IS = 20 A TJ = 25°C 0.85 1.1 V TJ = 125°C 0.72 Reverse Recovery Time tRR VGS = 0 V, dIS/dt = 100 A/ms, IS = 20 A 28.8 ns Charge Time ta 12.8 Discharge Time tb 16 Reverse Recovery Time QRR 20 nC PACKAGE PARASITIC VALUES Source Inductance LS TA= 25°C 2.49 nH Drain Inductance LD 0.02 Gate Inductance LG 3.46 Gate Resistance RG 1.75 W 3. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces). 4. Surface−mounted on FR4 board using the minimum recommended pad size (Cu area = 0.15 in sq [1 oz] including traces). 5. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%. 6. Switching characteristics are independent of operating junction temperatures. |
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