NTD65N03R

http://onsemi.com

2

THERMAL RESISTANCE MAXIMUM RATINGS

Parameter

Symbol

Value

Unit

Junction−to−Case (Drain)

2.5

°C/W

Junction−to−Ambient − Steady State (Note 3)

80

Junction−to−Ambient − Steady State (Note 4)

115

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

25

29.5

V

Drain−to−Source Breakdown Voltage

Temperature Coefficient

19.2

mV/

°C

Zero Gate Voltage Drain Current

1.5

mA

10

Gate−to−Source Leakage Current

"100

nA

ON CHARACTERISTICS (Note 5)

Gate Threshold Voltage

1.0

1.74

2.0

V

Negative Threshold Temperature Coefficient

4.8

mV/

°C

Drain−to−Source On Resistance

6.5

8.4

m

W

9.7

14.6

Forward Transconductance

27

mHos

CHARGES, CAPACITANCES AND GATE RESISTANCE

Input Capacitance

1177

1400

pF

Output Capacitance

555

Reverse Transfer Capacitance

218

Total Gate Charge

12.2

16

nC

Threshold Gate Charge

1.5

Gate−to−Source Charge

2.95

Gate−to−Drain Charge

6.08

SWITCHING CHARACTERISTICS (Note 6)

Turn−On Delay Time

6.3

ns

Rise Time

18.6

Turn−Off Delay Time

20.3

Fall Time

8.8

DRAIN−SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage

0.85

1.1

V

0.72

Reverse Recovery Time

28.8

ns

Charge Time

12.8

Discharge Time

16

Reverse Recovery Time

20

nC

PACKAGE PARASITIC VALUES

Source Inductance

2.49

nH

Drain Inductance

0.02

Gate Inductance

3.46

Gate Resistance

1.75

W

3. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces).

4. Surface−mounted on FR4 board using the minimum recommended pad size (Cu area = 0.15 in sq [1 oz] including traces).

5. Pulse Test: Pulse Width

≤ 300 ms, Duty Cycle ≤ 2%.

6. Switching characteristics are independent of operating junction temperatures.