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NTD50N03R-35G Datasheet(PDF) 3 Page - ON Semiconductor

Part # NTD50N03R-35G
Description  Power MOSFET
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
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NTD50N03R-35G Datasheet(HTML) 3 Page - ON Semiconductor

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ELECTRICAL CHARACTERISTICS (continued) (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
SWITCHING CHARACTERISTICS (Note 6)
Turn−On Delay Time
td(on)
VGS = 4.5 V, VDS = 15 V,
ID = 30 A, RG = 3.0 W
8.2
ns
Rise Time
tr
9.6
Turn−Off Delay Time
td(off)
11.2
Fall Time
tf
6.8
Turn−On Delay Time
td(on)
VGS = 11.5 V, VDS = 15 V,
ID = 30 A, RG = 3.0 W
5.0
ns
Rise Time
tr
84
Turn−Off Delay Time
td(off)
15
Fall Time
tf
4.0
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
VSD
VGS = 0 V,
IS = 30 A
TJ = 25°C
0.85
1.1
V
TJ = 125°C
0.71
Reverse Recovery Time
tRR
VGS = 0 V, dIS/dt = 100 A/ms,
IS = 30 A
24
ns
Charge Time
ta
14
Discharge Time
tb
10.5
Reverse Recovery Charge
QRR
14
nC
PACKAGE PARASITIC VALUES
Source Inductance
LS
Ta = 25C
2.49
nH
Drain Inductance
LD
0.02
Gate Inductance
LG
3.46
Gate Resistance
RG
3.75
W
6. Switching characteristics are independent of operating junction temperatures.


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