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CM30MD3-12H Datasheet(PDF) 3 Page - Mitsubishi Electric Semiconductor |
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CM30MD3-12H Datasheet(HTML) 3 Page - Mitsubishi Electric Semiconductor |
3 / 5 page Feb.1999 MITSUBISHI IGBT MODULES CM30MD3-12H MEDIUM POWER SWITCHING USE FLAT-BASE TYPE, INSULATED TYPE ELECTRICAL CHARACTERISTICS (Tj = 25 °C) INVERTER PART CONVERTER PART Note 1. IE, VEC, trr, Qrr & die/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode. 2. Pulse width and repetition rate should be such that the device junction temp. (Tj) does not exceed Tjmax rating. 3. Junction temperature (Tj) should not increase beyond 150 °C. 4. Pulse width and repetition rate should be such as to cause negligible temperature rise. 5. Thermal resistance is specified under following conditions. • The conductive greese applied, between module and fin. • Al plate is used as fin. Collector cutoff current Gate-emitter threshold voltage Gate-emitter cutoff current Collector-emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Emitter-collector voltage Reverse recovery time Reverse recovery charge Thermal resistance V V 1 0.5 2.8 — 3.0 2.4 0.6 — 120 300 200 300 2.8 110 — 1.9 2.4 VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V Tj = 25 °C Tj = 150 °C VCC = 300V, IC = 30A, VGE = 15V VCC = 300V, IC = 30A VGE1 = VGE2 = 15V RG = 21 Ω Resistive load IE = 30A, VGE = 0V IE = 30A, VGE = 0V die / dt = – 60A / µs IGBT part, Per 1/6 module FWDi part, Per 1/6 module mA µ A nF nF nF nC ns ns ns ns V ns µ C °C/W °C/W — — 2.1 2.15 — — — 90 — — — — — — 0.08 — — — — — — — — — — — — — — — — — — — ICES IGES Cies Coes Cres QG td (on) tr td (off) tf VEC (Note. 1) trr (Note. 1) Qrr (Note. 1) Rth(j-f)Q (Note. 5) Rth(j-f)R (Note. 5) Symbol Parameter Test conditions VGE(th) VCE(sat) Limits Min. Typ. Max. Unit 6 4.5 7.5 IC = 3mA, VCE = 10V IC = 30A, VGE = 15V (Note. 4) VCE = 10V VGE = 0V Repetitive reverse current Forward voltage drop Thermal resistance VR = VRRM, Tj = 150 °C IF = 40A Per 1/4 module mA V °C/W — — — — — — IRRM VFM Rth(j-f) (Note. 5) Symbol Parameter Condition Limits Min. Typ. Max. Unit 8 1.6 1.7 |
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