Feb.1999

MITSUBISHI IGBT MODULES

CM30MD3-12H

MEDIUM POWER SWITCHING USE

FLAT-BASE TYPE, INSULATED TYPE

°C)

INVERTER PART

CONVERTER PART

°C.

4. Pulse width and repetition rate should be such as to cause negligible temperature rise.

5. Thermal resistance is specified under following conditions.

•

The conductive greese applied, between module and fin.

•

Al plate is used as fin.

Collector cutoff current

Gate-emitter

threshold voltage

Gate-emitter cutoff current

Collector-emitter

saturation voltage

Input capacitance

Output capacitance

Reverse transfer capacitance

Total gate charge

Turn-on delay time

Turn-on rise time

Turn-off delay time

Turn-off fall time

Emitter-collector voltage

Reverse recovery time

Reverse recovery charge

Thermal resistance

V

V

1

0.5

2.8

—

3.0

2.4

0.6

—

120

300

200

300

2.8

110

—

1.9

2.4

°C

°C

Ω

Resistive load

µs

IGBT part, Per 1/6 module

FWDi part, Per 1/6 module

mA

µ A

nF

nF

nF

nC

ns

ns

ns

ns

V

ns

µ C

°C/W

°C/W

—

—

2.1

2.15

—

—

—

90

—

—

—

—

—

—

0.08

—

—

—

—

—

—

—

—

—

—

—

—

—

—

—

—

—

—

—

Symbol

Parameter

Test conditions

Limits

Min.

Typ.

Max.

Unit

6

4.5

7.5

(Note. 4)

Repetitive reverse current

Forward voltage drop

Thermal resistance

°C

Per 1/4 module

mA

V

°C/W

—

—

—

—

—

—

Symbol

Parameter

Condition

Limits

Min.

Typ.

Max.

Unit

8

1.6

1.7