NE5510179A-T1 datasheet(3/4 Pages) CEL

Part #	NE5510179A-T1

Description	3.5 V OPERATION SILICON RF POWER MOSFET FOR 1.9 GHZ TRANSMISSION AMPLIFIERS

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Manufacturer	CEL [California Eastern Labs]

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NE5510179A

P.C.B. LAYOUT1 (Units in mm)

4.0

1.7

6.1

0.5

Source

Drain

Gate

Through hole

φ 0.2 × 33

Note:

1. Use rosin or other material to prevent solder from penetrating

through-holes.

TYPICAL PERFORMANCE CURVES (TA = 25°C)

Gate to Source Voltage, VGS (V)

OUTPUT POWER, DRAIN CURRENT,

EFFICIENCY, AND POWER ADDED

EFFICIENCY VS. INPUT POWER

Input Power, PIN (dBm)

OUTPUT POWER, DRAIN CURRENT,

EFFICIENCY, AND POWER ADDED

EFFICIENCY VS. GATE TO SOURCE

VOLTAGE

Gate to Source Voltage, VGS (V)

Input Power, PIN (dBm)

VDS = 3.5 V,

IDQ = 200 mA,

freq = 1.9 GHz

PO = 29.7 dBm

31

26

21

16

11

6

25

20

15

10

5

0

250

500

750

1000

1250

0

50

100

POUT

ID

η

ηADD

VDS = 3.5 V,

freq = 1.9 GHz,

PIN = 22 dBm

PMAX = 30.1 dBm

POUT

APC

31

30

29

28

27

26

4.0

3.0

2.0

1.0

0.0

0

250

500

750

1000

1250

0

50

100

η

ηADD

IDS

VDS = 2.8 V,

IDQ = 200 mA,

freq = 1.9 GHz

PO = 28.7 dBm

30

25

20

15

10

5

25

20

15

10

5

0

250

500

750

1000

1250

0

50

100

POUT

ID

η

ηADD

VDS = 2.8 V,

freq = 1.9 GHz,

PIN = 22 dBm

PMAX = 29.0 dBm

POUT

Ids

APC

30

29

28

27

26

25

4.0

3.0

2.0

1.0

0.0

0

250

500

750

1000

1250

0

50

100

η

ηADD

OUTPUT POWER, DRAIN CURRENT,

EFFICIENCY, AND POWER ADDED

EFFICIENCY VS. INPUT POWER

OUTPUT POWER, DRAIN CURRENT,

EFFICIENCY, AND POWER ADDED

EFFICIENCY VS. GATE TO SOURCE

VOLTAGE

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NE5510179A-T1 Datasheet(PDF) 3 Page - California Eastern Labs

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