MGFS45V2735_04 datasheet(2/3 Pages) MITSUBISHI

Part #	MGFS45V2735

Description	2.7 - 3.5GHz BAND 30W INTERNALLY MATCHED GaAs FET

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Manufacturer	MITSUBISHI [Mitsubishi Electric Semiconductor]

Direct Link	http://www.mitsubishichips.com

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MITSUBISHI SEMICONDUCTOR <GaAs FET>

MGFS45V2735

2.7 - 3.5GHz BAND 30W INTERNALLY MATCHED GaAs FET

TYPICAL CHARACTERISTICS

S parameters

( Ta=25deg.C , VDS=10(V),IDS=8(A) )

S-Parameter (TYP.)

f

S11

S21

S12

S22

(GHz)

Magn.

Angle(deg)

Magn.

Angle(deg)

Magn.

Angle(deg)

Magn.

Angle(deg)

2.60

0.63

88

3.39

38

0.03

-17

0.59

26

2.70

0.58

47

3.90

3

0.04

-52

0.49

-1

2.80

0.51

1

4.30

-31

0.05

-86

0.41

-30

2.90

0.47

-51

4.52

-66

0.06

-122

0.32

-67

3.00

0.47

-105

4.51

-101

0.06

-157

0.27

-106

3.10

0.50

-152

4.33

-135

0.06

166

0.24

-137

3.20

0.51

166

4.15

-168

0.05

134

0.23

-165

3.30

0.49

123

4.04

159

0.06

100

0.21

174

3.40

0.45

61

3.92

117

0.06

49

0.15

149

3.50

0.48

-11

3.60

76

0.06

8

0.05

165

3.60

0.64

-75

2.86

33

0.05

-40

0.16

-115

June-'04

P1dB,GLP vs. f

41

42

43

44

45

46

47

2.6

2.7

2.8

2.9

3.0

3.1

3.2

3.3

3.4

3.5

3.6

FREQUENCY f (GHz)

10

12

14

16

18

20

22

VDS=10V

ID=8A

P1dB

GLP

Po,P.A.E. vs. Pin

25

30

35

40

45

50

15

20

25

30

35

40

INPUT POWER Pin (dBm)

0

20

40

60

80

100

VDS=10V

ID=8A

f=3.1GHz

Po

P.A.E.

111

Po,IM3 vs. Pin

26

28

30

32

34

36

38

40

42

18

20

22

24

26

28

30

INPUT POWER Pin (dBm) S.C.L.

-60

-50

-40

-30

-20

-10

0

10

20

IM3

Po

VDS=10V

IDS=8A

f=3.5GHz

Delta f=10MHz

2-tone test

MITSUBISHI

ELECTRIC

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