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ML920J16S-05 Datasheet(PDF) 2 Page - Mitsubishi Electric Semiconductor |
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ML920J16S-05 Datasheet(HTML) 2 Page - Mitsubishi Electric Semiconductor |
2 / 3 page MITSUBISHI LASER DIODES ML9XX11,ML9XX16,ML9XX22 SERIES Notice : Some parametric limits are subject to change InGaAsP DFB LASER DIODES Dec. 2004 MITSUBISHI ELECTRIC ELECTRICAL/OPTICAL CHARACTERISTICS (Tc=25ºC otherwise specified) [Aspherical lens cap ; ML925J11F/ML925J16F/ML925J22F/ ML920L11S/ML920L16S/ ML920L22S] Symbol Parameter Test conditions Min. Typ. Max. Unit CW --- 8 15 Ith Threshold current CW, Tc=85 ºC --- 30 50 mA CW, Po=5mW --- 25 40 Iop Operation current CW, Po=5mW, Tc=85 ºC --- 60 80 mA Vop Operating voltage CW, Po=5mW --- 1.1 1.5 V η Slope efficiency CW, Po=5mW 0.20 0.28 --- mW/mA λp Peak wavelength CW, Po=5mW <**> nm SMSR Side mode suppression ratio CW, Po=5mW Tc= 0 to +85 ºC 35 40 --- dB Pf Fiber coupling power CW, Po=5mW, SMF 1.5 2.0 --- mW Df Focul length CW, Po=5mW, SMF 6.5 7.5 8.5 mm tr,tf Rise and Fall time Ib=Ith, 20-80% <*> --- 0.1 0.2 ns Im Monitoring output current (PD) CW, Po=5mW 0.05 0.2 --- mA Id Dark current (PD) VRD=5V --- --- 0.1 µA Ct Capacitance (PD) VRD=5V --- 10 20 pF <*> Except influence of the 18mm lead. <**> Peak wavelength Limits Type Symb ol Test condition Min. Typ. Max. Unit ML925B16F-04 / ML920J16S-04 / ML925J16F-04 / ML920L16S-04 1467 1470 1473 ML925B16F-05 / ML920J16S-05 / ML925J16F-05 / ML920L16S-05 1487 1490 1493 ML925B11F-04 / ML920J11S-04 / ML925J11F-04 / ML920L11S-04 1507 1510 1513 ML925B11F-05 / ML920J11S-05 / ML925J11F-05 / ML920L11S-05 1527 1530 1533 ML925B11F-06 / ML920J11S-06 / ML925J11F-06 / ML920L11S-06 1547 1550 1553 ML925B22F-04 / ML920J22S-04 / ML925J22F-04 / ML920L22S-04 1567 1570 1573 ML925B22F-05 / ML920J22S-05 / ML925J22F-05 / ML920L22S-05 1587 1590 1593 ML925B22F-06 / ML920J22S-06 / ML925J22F-06 / ML920L22S-06 λp CW Po=5mW Tc=25 ºC 1607 1610 1613 nm |
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