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ML925B40F-04 Datasheet(PDF) 1 Page - Mitsubishi Electric Semiconductor |
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ML925B40F-04 Datasheet(HTML) 1 Page - Mitsubishi Electric Semiconductor |
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1 / 3 page  MITSUBISHI LASER DIODES ML9XX40 SERIES Notice : Some parametric limits are subject to change 2.5Gbps InGaAsP DFB LASER DIODE Feb. 2005 MITSUBISHI ELECTRIC TYPE NAME DESCRIPTION ML9XX40 series are uncooled DFB (Distributed Feedback) laser diodes for 2.5Gbps transmission emitting light beam at 1470~1610nm. λ/4 shifted grating structure is employed to obtain excellent SMSR performance under 2.5Gbps modulation. Furthermore, ML9xx40 can operate in the wide temperature range from 0oC to 85 oC without any temperature control. They are well suited for light source in long distance digital transmission application of coarse WDM. APPLICATION · 2.5Gbps long-haul transmission · Coarse WDM application FEATURES · λ/4 shifted grating structure · Wide temperature range operation (0oC to 85oC) · High side-mode-suppression-ratio (typical 45dB) · High resonance frequency (typical 11GHz) ABSOLUTE MAXIMUM RATINGS Symbol Parameter Conditions Ratings Unit Po Output power CW 6 mW If Forward current (Laser diode) --- 150 mA VRL Reverse voltage (Laser diode) --- 2 V IFD Forward current (Photo diode) --- 2 mA VRD Reverse voltage (Photo diode) --- 20 V Tc Case temperature --- 0 to +85 ºC Tstg Storage temperature --- -40 to +100 ºC ELECTRICAL/OPTICAL CHARACTERISTICS (Tc=25ºC) Symbol Parameter Test conditions Min. Typ. Max. Unit CW --- 10 15 <*1> --- 35 40 Ith Threshold current CW Tc=85 ºC <*2> --- 45 50 mA CW, Po=5mW --- 35 45 <*1> --- 70 80 Iop Operation current CW, Po=5mW Tc=85 ºC <*2> --- 90 100 mA Vop Operating voltage CW, Po=5mW --- 1.1 1.5 V CW, Po=5mW 0.17 0.22 --- η Slope efficiency CW, Po=5mW <*3> 0.15 0.20 --- mW/mA λp Peak wavelength CW, Po=5mW <*4>,<*5> nm Side mode suppression ratio CW, Po=5mW, Tc=0 to 85 ºC 35 45 --- dB SMSR Side mode suppression ratio(RF) 2.48832Gbps,Ib=Ith, Ipp=40mA --- 45 --- θ // Beam divergence angle (parallel) <*6> CW, Po=5mW --- 25 --- deg. θ ┴ (perpendicular) <*6> CW, Po=5mW --- 30 --- deg. fr Resonance frequency 2.48832Gbps,Ib=Ith, Ipp=40mA --- 11 --- GHz tr,tf Rise and Fall time <*7> 2.48832Gbps,Ib=Ith, Ipp=40mA 20%-80% --- 80 120 ps Im Monitoring output current (PD) CW, Po=5mW,VRD=1V,RL=10 Ω 0.1 --- 1.0 mA Id Dark current (PD) VRD=5V --- --- 0.1 µA Ct Capacitance (PD) VRD=5V --- 10 20 pF <*1> Applied to ML9xx40-04~09 and -12~17. <*2> Applied to ML9xx40-10~11 and -18~19. <*3> Applied to ML925J40F and ML920L40S. <*6> Beam divergence is not applied to ML925J40F and ML920L40S. <*7> Except influence of the 18mm lead. ML925B40F / ML920J40S ML925J40F / ML920L40S |
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