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AO6420 Datasheet(PDF) 2 Page - Alpha & Omega Semiconductors |
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AO6420 Datasheet(HTML) 2 Page - Alpha & Omega Semiconductors |
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2 / 4 page  AO6420 Symbol Min Typ Max Units BVDSS 60 V 1 TJ=55°C 5 IGSS 100 nA VGS(th) 1 2.3 3 V ID(ON) 20 A 50 60 TJ=125°C 85 60 75 m Ω gFS 13 S VSD 0.78 1 V IS 3A Ciss 450 540 pF Coss 60 pF Crss 25 pF Rg 1.65 2 Ω Qg(10V) 9.5 11.5 nC Qg(4.5V) 4.3 5.5 nC Qgs 1.6 nC Qgd 2.2 nC tD(on) 5.1 7 ns tr 2.6 4 ns tD(off) 15.9 20 ns tf 23 ns trr 25.1 35 ns Qrr 28.7 nC THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Body Diode Reverse Recovery Charge Total Gate Charge IF=4.2A, dI/dt=100A/µs Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time IF=4.2A, dI/dt=100A/µs Input Capacitance N Channel Electrical Characteristics (T J=25°C unless otherwise noted) Parameter Conditions STATIC PARAMETERS Drain-Source Breakdown Voltage ID=250µA, VGS=0V IDSS Zero Gate Voltage Drain Current VDS=60V, VGS=0V µA Gate-Body leakage current VDS=0V, VGS= ±20V Gate Threshold Voltage VDS=VGS ID=250µA On state drain current VGS=10V, VDS=5V RDS(ON) Static Drain-Source On-Resistance Forward Transconductance m Ω VGS=4.5V, ID=3A VDS=5V, ID=4.2A IS=1A,VGS=0V VGS=10V, ID=4.2A Diode Forward Voltage VGS=10V, VDS=30V, RL=7Ω, RGEN=3Ω Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Total Gate Charge VGS=10V, VDS=30V, ID=4.2A VGS=0V, VDS=30V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Reverse Transfer Capacitance Gate resistance Output Capacitance A: The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve provides a single pulse rating. F.The current rating is based on the t ≤ 10s thermal resistance rating. Rev0: Feb. 2007 Alpha & Omega Semiconductor, Ltd. www.aosmd.com |
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