PHB87N03T datasheet(3/8 Pages) PHILIPS

Part #	PHB87N03T

Description	TrenchMOS transistor Standard level FET

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Manufacturer	PHILIPS [NXP Semiconductors]

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Philips Semiconductors

Product specification

TrenchMOS

™ transistor

PHB87N03T

Standard level FET

REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS

T

j = 25˚C unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

I

DR

Continuous reverse drain

-

75

A

current

I

DRM

Pulsed reverse drain current

-

240

A

V

SD

Diode forward voltage

I

F = 25 A; VGS = 0 V

-

0.95

1.2

V

I

F = 75 A; VGS = 0 V

-

1.0

-

V

t

rr

Reverse recovery time

I

F = 75 A; -dIF/dt = 100 A/µs;

-

95

-

ns

Q

rr

Reverse recovery charge

V

GS = -10 V; VR = 25 V

-

0.15

-

µC

AVALANCHE LIMITING VALUE

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

W

DSS

Drain-source non-repetitive

I

D = 45 A; VDD ≤ 15 V;

-

200

mJ

unclamped inductive turn-off

V

GS = 10 V; RGS = 50 Ω; Tmb = 25 ˚C

energy

December 1997

3

Rev 1.200

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