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RA45H8994M1-101 Datasheet(PDF) 4 Page - Mitsubishi Electric Semiconductor |
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RA45H8994M1-101 Datasheet(HTML) 4 Page - Mitsubishi Electric Semiconductor |
4 / 9 page MITSUBISHI RF POWER MODULE RoHS COMPLIANCE RA45H8994M1 RA45H8994M1 MITSUBISHI ELECTRIC 20 th Dec 2006 4/9 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS TYPICAL PERFORMANCE (Tcase=+25°C, ZG=ZL=50Ω, unless otherwise specified) O U T P UT P O W E R a n d D R A IN CURR E N T O UT P U T P O W E R a n d DRA IN CUR RE N T ver s u s D R A IN V O L T A G E ver s u s D R A IN V O L T A G E O U T P UT P O W E R a n d D R A IN CURR E N T O UT P U T P O W E R a n d DRA IN CUR RE N T ver s u s G A T E V O L T A G E 2 ver s u s G A T E V O L T A G E 2 0 10 20 30 40 50 60 01 23 45 G A T E VOL T AGE V GG 2 (V ) 0 2 4 6 8 10 12 f = 896M H z V DD = 12. 8V V GG 1 =3 . 4 V P in = 50m W IDD 0 10 20 30 40 50 60 012 3 45 GA T E VO L T AG E V GG 2 (V ) 0 2 4 6 8 10 12 P ou t (W ) f = 915M H z V DD = 12. 8V V GG 1 =3 . 4 V P in = 50m W IDD 0 10 20 30 40 50 60 70 80 90 2 4 6 8 10 12 14 16 D R A IN VOL T AGE V DD (V ) 0 2 4 6 8 10 12 14 16 18 P ou t f = 925M H z V GG 1 =3 . 4 V V GG 2 =5 V P in = 50m W IDD 0 10 20 30 40 50 60 70 80 90 24 68 1 0 1 2 1 4 1 6 D R A IN VOL T AGE V DD (V ) 0 2 4 6 8 10 12 14 16 18 P ou t f = 941M H z V GG1 =3 . 4 V V GG2 =5 V P in = 50m W IDD P ou t (d Bm ) P out (d B m ) P out (W ) O U T P UT P O W E R a n d D R A I N CURR E N T O UT P U T P O W E R a n d DRA I N CUR RE N T ver s u s G A T E V O L T A G E 2 ver s u s G A T E V O L T A G E 2 O U T P UT P O W E R a n d D R A I N CURR E N T O UT P U T P O W E R a n d DRA I N CUR RE N T ver s u s G A T E V O L T A G E 2 ver s u s G A T E V O L T A G E 2 O U T P UT P O W E R a n d D R A I N CURR E N T O UT P U T P O W E R a n d DRA I N CUR RE N T ver s u s G A T E V O L T A G E 2 ver s u s G A T E V O L T A G E 2 0 10 20 30 40 50 60 01 23 45 G A T E VOL T AGE V GG 2 (V ) 0 2 4 6 8 10 12 f = 925M H z V DD = 12. 8V V GG1 =3 . 4 V P in = 50m W IDD 0 10 20 30 40 50 60 0 1 23 45 GA T E VO L T AG E V GG 2 (V ) 0 2 4 6 8 10 12 f = 941M H z V DD = 12. 8 V V GG 1 =3 . 4 V P in = 50m W IDD 0 10 20 30 40 50 60 01 23 45 G A T E VOL T AGE V GG 2 (V ) 0 2 4 6 8 10 12 f = 896M H z V DD = 12. 8V V GG1 =3 . 4 V P in =4 d B m IDD 0 10 20 30 40 50 60 012 3 4 5 GA T E VO L T AG E V GG 2 (V ) 0 2 4 6 8 10 12 f = 915M H z V DD = 12. 8V V GG 1 =3 . 4 V P in =4 d B m IDD 0 10 20 30 40 50 60 01 23 45 GAT E VO L T AG E V GG 2 (V ) 0 2 4 6 8 10 12 f = 925M H z V DD = 12. 8V V GG1 =3 . 4 V P in =4 d B m IDD 0 10 20 30 40 50 60 012 3 4 5 GA T E VO L T AG E V GG 2 (V ) 0 2 4 6 8 10 12 f = 941M H z V DD = 12. 8V V GG 1 =3 . 4 V P in =4 d B m IDD P ou t (d B m ) P out (W ) P ou t (W ) P ou t (d B m ) P ou t (W ) P ou t (W ) P ou t (d B m ) P ou t (d B m ) P out (W ) P ou t (d B m ) P ou t (W ) P ou t (d B m ) |
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