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RD00HVS1 Datasheet(PDF) 3 Page - Mitsubishi Electric Semiconductor

Part # RD00HVS1
Description  RoHS Compliance, Silicon MOSFET Power Transistor 175MHz,0.5W
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Manufacturer  MITSUBISHI [Mitsubishi Electric Semiconductor]
Direct Link  http://www.mitsubishichips.com
Logo MITSUBISHI - Mitsubishi Electric Semiconductor

RD00HVS1 Datasheet(HTML) 3 Page - Mitsubishi Electric Semiconductor

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MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
RD00HVS1
RoHS Compliance, Silicon MOSFET Power Transistor 175MHz,0.5W
RD00HVS1
MITSUBISHI ELECTRIC
10 Jan 2006
OBSERVE HANDLING PRECAUTIONS
TYPICAL CHARACTERISTICS
Pin-Po CHARACTERISTICS
0
5
10
15
20
25
30
35
-15 -10
-5
0
5
10
15
Pin(dBm)
30
40
50
60
70
80
90
100
Ta=+25°C
f=175MHz
Vdd=12.5V
Idq=50mA
Po
ηｄ
Gp
Pin-Po CHARACTERISTICS
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
5
10
15
20
Pin(mW)
0
20
40
60
80
100
120
Po
ηd
Idd
Ta=25°C
f=175MHz
Vdd=12.5V
Idq=50mA
Vdd-Po CHARACTERISTICS
0
0.2
0.4
0.6
0.8
1
1.2
1.4
46
8
10
12
14
Vdd(V)
0
40
80
120
160
200
240
280
Po
Idd
Ta=25°C
f=175MHz
Pin=5mW
Idq=50mA
Zg=ZI=50 ohm
Pin-Po CHARACTERISTICS
0
5
10
15
20
25
30
35
-15 -10
-5
0
5
10
15
Pin(dBm)
30
40
50
60
70
80
90
100
Ta=+25°C
f=520MHz
Vdd=12.5V
Idq=50mA
Po
ηｄ
Gp
Pin-Po CHARACTERISTICS
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0
5
10
15
20
Pin(mW)
0
20
40
60
80
100
120
140
Po
ηd
Idd
Ta=25°C
f=520MHz
Vdd=12.5V
Idq=50mA
Vdd-Po CHARACTERISTICS
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
4
6
8
10
12
14
Vdd(V)
0
40
80
120
160
200
240
280
320
Po
Idd
Ta=25°C
f=520MHz
Pin=15mW
Idq=50mA
Zg=ZI=50 ohm
3/6


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